利用微波等离子体化学气相沉积(MPCVD)技术,以丙酮为碳源,用二甲基二硫和三氧化二硼作掺杂源,在硅衬底上制备了硼与硫共掺杂的金刚石薄膜.用俄歇谱分析金刚石薄膜中硫的含量,用傅里叶红外光谱(FTIR)分析了薄膜表面键结构,用扫描电子显微镜(SEM)观测薄膜的表面形貌,X射线衍射(XRD)和喇曼(Raman)光谱表征膜层的结构.结果表明:微量硼的加入促进硫在金刚石中的固溶度,使硫在金刚石中的掺杂率提高了近50%;随着薄膜中硫含量的增加,薄膜的导电性增加,当薄膜中硫含量达到0.15%(原子分数)时其导电激活能为0.39eV.
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