退火温度对(Bi0.8La0.2)2Ti2O7薄膜物理和电学性质的影响

功能材料, 2004, 35(z1): 1439-1441.

1.山东大学,晶体材料国家重点实验室,山东,济南,250100

2.山东大学,晶体材料国家重点实验室,山东,济南,250100

3.山东大学,环境工程与科学学院,山东,济南,250100

基金项目: 国家自然科学基金(05130390)

Effect of annealing temperature on physical and electrical properties of (Bi0.8La0.2)2Ti2O7 thin films

采用化学溶液沉积法,在Si[100]衬底上制备了掺La的(Bi0.8La0.2)2Ti2O7薄膜,研究了退火温度对薄膜结晶性及电学性能的影响.研究发现,随着退火温度的升高,样品的结晶性越来越好;漏电流密度随之降低,表明绝缘性逐渐增强.实验证明该薄膜具有良好的绝缘性和较高的介电常数.

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