通过B2O3蒸汽掺杂,Y-BaTiO3陶瓷的烧结温度大幅度降低。B2O3蒸汽掺杂后的样品,室温电阻率下降,升阻比提高,通过对氧化硼蒸汽掺杂样品的XRD分析研究表明,硼间隙可以在钛酸钡晶格中存在,硼间隙和/或相关缺陷络合物可以形成电子捕获中心,从而提高PTCR效应。
Media-low temperature sintering technique is- widely used for the fabrication of BaTiO3 based ceramics. The sintering temperature of BaTiO3-based ceramics will be decreased greatly through the doping of B2O3 vapor. Doping with B2O3 vapor results in the sample with low room temperature resistivity and high resistance jump relatively. It is revealed that boron interstitial can exist in the grain lattice of BaTiO3. The boron interstitial or/and its complex can form electron capture center and enhance the PTCR effect of the sample.
参考文献
| [1] | Rhim S M, Hong S, Bak H, et al. J. Am. Ceram. Soc., 2000, 83 (5): 1145--1148. [2] Lee J H, Heo Y W, Lee J A, et al. Solid State ionics, 1977, 101-103: 787--791. [3] 齐建全, 李龙土, 朱青, 等(Qi Jian-Quan, et al). 无机材料学报(Journal of Inorganic Materials), 2001, 16 (7): 739--741. [4] Qi J Q, Zhu Q, Wang Y L, et al. Solid State Communications, 2001, 120: 505--508. [5] Nemoto H, Oda I. J. Am. Ceram. Soc., 1980, 63 (7-8): 398--401. |
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