采用 X 射线光电子谱( X P S) 分析300 ~500℃ 等离子体源离子渗氮硼和碳化硼薄膜合成的氮化硼和硼碳氮薄膜利用合成薄膜成分可控的特点, 研究 B、 C、 N 对薄膜的 X P S影响结果表明, X P S分析合成氮化硼薄膜能够确定其化学组成, 但不能确定sp2 和sp3 型键合结构特性; X P S 分析硼碳氮薄膜能够确定其成分和结构特性在较高的工艺温度下, 等离子体源离子渗氮合成的硼碳氮薄膜具有sp2 和sp3 型复合的键合结构
The synthesized boron nitride and boron-carbon-nitrogen films by plasma source ion nitriding were analyzed by X-ray photoelectron spectroscopy
(XPS). The effects of boron, carbon and nitrogen elements in the films on the XPS results were studied making use of the film characteristics with the
controllable composition. The XPS revealed that the formation of boron nitride films was confirmed but the sp2 and sp3 plain microdomain structures were difficult distinguished, and the formation and bonding structures of boron-carbon-nitrogen
films could be determined. The synthesized boron-carbon-nitrogen films possessed a mixing structure of sp2 and sp3 plain microdomains
in the processes.
参考文献
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