基于复合靶溅射制备Mg2Si薄膜及其热电性能

中国有色金属学报, 2016, 26(6): 1214-1221.

基于复合靶溅射制备Mg2Si薄膜及其热电性能

1.福州大学材料科学与工程学院,福州,350116

2.福州大学材料科学与工程学院,福州,350116

3.福州大学材料科学与工程学院,福州,350116

4.福州大学材料科学与工程学院,福州,350116

基金项目: Project (LXKQ201305) supported by the Project Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry,China Project(51301039) supported by the National Natural Science Foundation of China 国家自然科学基金资助项目(51301039) 教育部留学回国人员科研启动基金资助项目(LXKQ201305)

关键词： Mg2Si薄膜 , 射频磁控溅射 , 工艺优化 , 热电性能

Thermoelectric properties of Mg2Si thin films prepared by magnetron sputtering based on composite target

Keywords： Mg2Si thin film , radio frequency magnetron sputtering , optimal preparation process , thermoelectric properties

采用射频磁控溅射Mg-Si二元复合靶制备Mg2Si热电薄膜,研究溅射功率、真空退火温度及退火时间对其性能的影响,探究较优的Mg2Si薄膜制备工艺.利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、霍尔效应测试仪、薄膜Seebeck系数测量系统对薄膜特性进行测试.由薄膜断面的能谱分析可知,Mg、Si元素在薄膜中分布均匀,且薄膜中Mg与Si摩尔比为2∶1,与Mg2Si相的组成摩尔比相符;XRD测试结果表明,溅射功率、真空退火温度及退火时间对薄膜的成膜质量均有影响.霍尔效应测试及Seebeck系数测量结果表明:所制备的Mg2Si薄膜均为n型半导体薄膜,其Seebeck系数的取值范围为-278.648～-483.562 μV/K,薄膜电导率的取值范围为1.240～46.926 S/cm;120 W溅射功率下沉积的Mg2Si薄膜经400℃真空退火保温3h后,获得最大功率因子,其值为0.364 mW/(m·K2).

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