SiC/ZnO/Si镶嵌结构的光致发光研究

功能材料, 2010, 41(12): 2151-2156.

1.西北师范大学,知行学院,甘肃,兰州,730070

2.西北师范大学,物理与电子工程学院,甘肃,兰州,730070

基金项目: 国家杰出青年科学基金资助项目(50725416)

Study of the photoluminescence of SiC/ZnO/Si complex film

采用磁控溅射法制备了SiC/ZnO/Si镶嵌结构复合薄膜,对样品采用了不同的温度进行退火处理,测定了样品的光致发光图谱.结果显示,复合薄膜的光致发光强度较单体薄膜有一定的增强,主要原因是发光复合中心的多元化和分布浓度的增加;随着退火温度的不同,各峰位的变化趋势有所不同.

[1]	SUN Guo-sheng;LUO Mu-chang;Wang Lei et al.[J].Chinese Journal of Luminescence,2003,24(04):4212425.
[2]	Jeong S H;Kim B S;Lee B T et al.[J].Applied Physics Letters,2003,82:2625.
[3]	Dimaria D J;Kirtley J R;Pakulis E J et al.[J].Applied Physics,1984,56:401.
[4]	Zhao Yong-qing;Zhou Lian;Alain Vassel .[J].Rare Metal Materials and Engineering,2003,32(03):161.
[5]	Zhu Yan;Yang Yanqing;Ma Zhijun .[J].Rare Metal Materials and Engineering,2002,31(06):410.
[6]	Kazunori M;Yasushi K;Yukinobu K et al.[J].Japanese Journal of Applied Physics,1997,36(11A):1453-1455.
[7]	余明斌,马剑平,罗家骏,陈治明.在硅衬底上用HFCVD法生长的纳米SiC薄膜及其室温光致发光[J].半导体学报,2000(07):673-676.
[8]	Liu Xueqin;Zhang Jing;Yun Zhijun et al.[J].Mater Phys Mech,2001,4:85.
[9]	Bachari E M;BauD G;Amor S B et al.[J].Thin Solid Films,1999,348:165-172.
[10]	Zhang Hong-tao;Xu Zhong-yang;Zou Xue-cheng et al.[J].Ceramic Engineering,2000,24(01):326.
[11]	Lin Bixia;Fu Zhuxi;Jia Yunbo et al.[J].Acta Physica Sinica,2001,50(11):2208.
[12]	Yu Wei;He Jie;Sun Yun-tao et al.[J].Photoluminescence of Nano-SiC Annealed by Pulse Laser,2005,25(04):506-508.

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