采用射频磁控溅射(rf magnetron sputtering)在Si(100)衬底上生长得到MgO薄膜.将在不同气压和Ar分压条件下得到的样品在氧气氛围下1000℃退火并进行X射线衍射(XRD)分析,结果表明,溅射总气压和O2分压影响MgO薄膜的择优取向,控制总气压和Ar分压可以控制MgO薄膜的晶格取向,Si衬底取向也对薄膜的择优取向产生影响.通过扫描电子显微镜(SEM)分析发现,MgO薄膜经过高温退火形成结晶并产生了表面裂纹.
参考文献
[1] | Mueller A H;Suvorova N A;Irene E A .[J].Journal of Applied Physics,2003,93:3866-3872. |
[2] | Kaya M;Atici Y .[J].Superlattices and Microstructures,2004,35:35-44. |
[3] | Hamid N A;Shamsudin N F;See K W .[J].Materials Research Innovations,2009,13:379-381. |
[4] | Kang B S;Jang-Sik L;Stan L .[J].Applied Physics Letters,2004,85:4702-4704. |
[5] | LeeS Y;Tseng T Y .[J].Applied Physics Letters,2002,80:1798-1799. |
[6] | Jia Jianfeng;Huang Kai;Pan Qingtao et al.[J].Journal of Sol-Gel Science and Technology,2007,42:9-12. |
[7] | X. Y. Chen;K. H. Wong;C. L. Mak;X. B. Yin;M. Wang;J. M. Liu;Z. G. Liu .Selective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100) by pulsed laser deposition[J].Journal of Applied Physics,2002(9):5728-5734. |
[8] | Chen Tonglai;Li Xiaomin;Zhang Sam et al.[J].Journal of Crystal Growth,2004,435:95-101. |
[9] | Pinto R;Poothra J I;Purandare S C et al.[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1991,9:2670-2674. |
[10] | Srinivasan, P.;Spearing, S. M. .Effect of Heat Transfer on Materials Selection for Bimaterial Electrothermal Actuators[J].Journal of Microelectromechanical Systems,2008(3):653-667. |
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