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采用射频磁控溅射(rf magnetron sputtering)在Si(100)衬底上生长得到MgO薄膜.将在不同气压和Ar分压条件下得到的样品在氧气氛围下1000℃退火并进行X射线衍射(XRD)分析,结果表明,溅射总气压和O2分压影响MgO薄膜的择优取向,控制总气压和Ar分压可以控制MgO薄膜的晶格取向,Si衬底取向也对薄膜的择优取向产生影响.通过扫描电子显微镜(SEM)分析发现,MgO薄膜经过高温退火形成结晶并产生了表面裂纹.

参考文献

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