随着Si-MOS集成电路的迅速发展,高k值栅介质材料将成为下一代MOS器件绝缘栅最有希望的候选材料.介绍了近年来HfO2栅介质材料在制备方法和电学特性方面的研究进展,提出了改善其电学特性的主要途径,其中包括非金属元素掺杂、构建组分渐变界面、设计准二元合金系统、制备堆垛积层结构、抑制界面层生长和选择适宜的电极材料等.
参考文献
| [1] | 相文峰,颜雷,谈国太,郭海中,刘丽峰,吕惠宾,周岳亮,陈正豪.硅基集成电路的发展和新一代栅极氧化物材料的研究现状[J].物理,2003(04):228-234. |
| [2] | 周晓强,凌惠琴,毛大立,李明.高介电常数栅介质材料研究动态[J].微电子学,2005(02):163-168. |
| [3] | 赵毅.高K栅介质研究进展[J].半导体技术,2004(05):16-19. |
| [4] | Cho MJ;Jeong DS;Park J;Park HB;Lee SW;Park TJ;Hwang CS;Jang GH;Jeong J .Comparison between atomic-layer-deposited HfO2 films using O-3 or H2O oxidant and Hf[N(CH3)(2)](4) precursor[J].Applied physics letters,2004(24):5953-5955. |
| [5] | Conley J F Jr;Ono Y et al.Densification and improved electrical properties of pulse deposited films via in situ modulated temperature annealing[J].Applied Physics Letters,2004,84(11):1913. |
| [6] | Kim, J;Kim, S;Jeon, H;Cho, MH;Chung, KB;Bae, C .Characteristics of HfO2 thin films grown by plasma atomic layer deposition[J].Applied Physics Letters,2005(5):3108-1-3108-3-0. |
| [7] | Akbar MS;Moumen N;Barnett J;Sim J;Lee JC .Effect of NH3 surface nitridation temperature on mobility of ultrathin atomic layer deposited HfO2[J].Applied physics letters,2005(3):2906-1-2906-3-0. |
| [8] | J-F. Damlencourt;O. Renault;F. Martin;M-N. Semeria;T Billon;F. Bedu .Surface treatment for the atomic layer deposition of HfO_(2) on silicon[J].Applied physics letters,2005(14):141913-1-141913-3-0. |
| [9] | Zheng YD;Mizuta H;Tsuchiya Y;Endo M;Sato D;Oda S .In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source metal-organic chemical-vapor deposition[J].Journal of Applied Physics,2005(2):3527-1-3527-9-0. |
| [10] | Park J;Park B K;Cho M et al.Chemical vapor deposition of HfO2 thin films using a n-ovel carbon-free precursor -characterization of the interface with silicon substrate[J].Eletrochemical Society,2002,149(01):G89. |
| [11] | Fang Q;Zhang J Y;Wang Z M et al.High-k dielectrics by UV photo-assisted chemical vapour deposition[J].Microelectronic Engineering,2003,66:621. |
| [12] | 阎志军,王印月,徐闰,蒋最敏.电子束蒸发制备HfO2高k薄膜的结构特性[J].物理学报,2004(08):2771-2774. |
| [13] | 韩德栋,康晋锋,刘晓彦,韩汝琦.HfO2高K栅介质薄膜的电学特性研究[J].固体电子学研究与进展,2004(01):1-3. |
| [14] | Pereira L;Marques A;Aguas H et al.Performances of hafnium oxide produced by radio freq-uency sputtering for gate dielectric application[J].MATERIALS SCIENCE & ENGINEERING B-SOLID STATE MATE,2004,109:89. |
| [15] | J. F. Kang;H. Y. Yu;C. Ren;M.-F. Li;D. S. H. Chan;H. Hu;H. F. Lim;W. D. Wang;D. Gui;D.-L. Kwong .Thermal stability of nitrogen incorporated in HfN_(x)O_(y) gate dielectrics prepared by reactive sputtering[J].Applied physics letters,2004(9):1588-1590. |
| [16] | Lai CS;Wu WC;Wang JC;Chao T .Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate[J].Applied physics letters,2005(22):2905-1-2905-3-0. |
| [17] | Iwamoto K;Ogawa A;Nabatame T et al.Performance improvement of n-MOSFETs with constituent gradient HfO2/SiO2 interface[J].Microelectronic Engineering,2005,80:202. |
| [18] | Lysaght P;Foran B;Stemmer S et al.Thermal response of MOCVD hafnium silicate[J].Microelectronic Engineering,2003,69:182. |
| [19] | Heiji Watanabe;Motofumi Saitoh;Nobuyuki Ikarashi;Toru Tatsumi .High-quality HfSi_(x)O_(y) gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal-Hf and SiO_(2) underlayer[J].Applied physics letters,2004(3):449-451. |
| [20] | R. J. Potter;P. A. Marshall;P. R. Chalker;S. Taylor;A. C. Jones;T. C. Q. Noakes;P. Bailey .Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition[J].Applied physics letters,2004(20):4119-4121. |
| [21] | Mikhelashvili V;Brener R;Kreinin O;Meyler B;Shneider J;Eisenstein G .Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation[J].Applied physics letters,2004(24):5950-5952. |
| [22] | Yu XF;Zhu CX;Li MF;Chin A;Du AY;Wang WD;Kwong DL .Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate[J].Applied physics letters,2004(14):2893-2895. |
| [23] | Kita K;Kyuno K;Toriumi A .Permittivity increase of yttrium-doped HfO2 through structural phase transformation[J].Applied physics letters,2005(10):2906-1-2906-3-0. |
| [24] | Kamiyama S;Miura T;Nara Y;Arikado T .Electrical properties of 0.5 nm thick Hf-silicate top-layer/HfO2 gate dielectrics by atomic layer deposition[J].Applied physics letters,2005(22):2904-1-2904-3-0. |
| [25] | Park M;Koo J;Kim J et al.Suppression of parasitic Si substrate oxidation in ultrathin-Al2 O3-Si structures prepared by atomic layer deposition[J].Applied Physics Letters,2005,86(25):252110-1. |
| [26] | K. Choi;H. Temkin;H. Harris;S. Gangopadhyay;L. Xie;M. White .Initial growth of interfacial oxide during deposition of HfO_(2) on silicon[J].Applied physics letters,2004(2):215-217. |
| [27] | S. Toyoda;J. Okabayashi;H. Kumigashira;M. Oshima;K. Ono;M. Niwa;K. Usuda;G. L. Liu .Effects of interlayer and annealing on chemical states of HfO_(2) gate insulators studied by photoemission spectroscopy[J].Applied physics letters,2004(13):2328-2330. |
| [28] | Puthenkovilakam R;Sawkar M;Chang JP .Electrical characteristics of postdeposition annealed HfO2 on silicon[J].Applied physics letters,2005(20):2902-1-2902-3-0. |
| [29] | Van Elshocht S;Brijs B;Caymax M;Conard T;Chiarella T;De Gendt S;De Jaeger B;Kubicek S;Meuris M;Onsia B .Deposition of HfO2 on germanium and the impact of surface pretreatments[J].Applied physics letters,2004(17):3824-3826. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%