单根CuTCNQ纳米线的电学开关特性

功能材料, 2010, 41(5): 918-921.

单根CuTCNQ纳米线的电学开关特性

李先懿 ^1, , 郑凯波 ^2, , 陈冠雨 ^3, , 莫晓亮 ^4, , 孙大林 ^5, , 陈国荣 ^6,

1.复旦大学,材料科学系,上海,200433

2.复旦大学,材料科学系,上海,200433

3.复旦大学,材料科学系,上海,200433

4.复旦大学,材料科学系,上海,200433

5.复旦大学,材料科学系,上海,200433

6.复旦大学,材料科学系,上海,200433

基金项目: 国家自然科学基金(60471010) 上海市重点学科资助项目(B113) 上海市科委纳米专项(0752nm016)

关键词：金属有机配合物 , CuTCNQ , 纳米线 , 电荷转移 , 开关特性 , 负阻效应

Electrical switching property of single CuTCNQ nanowire

用溶液法制备了CuTCNQ纳米线.用X射线衍射(XRD)和扫描电子显微镜(SEM)表征了样品的结构及形貌,用拉曼光谱(Raman)研究了CuTCNQ纳米线的电荷转移情况.研究了其不同温度下的电学特性.CuTCNQ纳米线的长度为1～8μm,直径50～300nm.XRD结果显示制备得到的CuTCNQ为Ⅰ相.研究表明,在外加电场作用下,单根CuTCNQ纳米线表现出可逆的电开关特性,阻态转变前后其电阻的变化达3个数量级.高低阻态转变电场阈值约为1.8 V/μm.另外,CuTCNQ纳米线的电阻随着温度的降低而增大,当温度低于临界值160K时,低阻态的CuTCNQ纳米线将出现负阻效应.

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