首先采用固相法合成CaCu_3Ti_4O_(12)(CCTO)粉体,与SiC粉体均匀混合后,采用真空热压制备了SiC/CCTO复合陶瓷电容器.采用DSC-TG技术分析了SiC/CCTO复合粉体的热行为,采用XRD、SEM等手段对样品进行表征,研究了SiC/CCTO复合陶瓷电容器的介电性能,并对其介电机理进行了探讨.结果发现,在950 ℃和 30 MPa的热压条件下制备出的 SiC/CCTO复合陶瓷电容器具有最高的介电常数ε_r≈3×10~8(1 kHz),分析认为其介电机理属于阻挡层机制,载流子在SiC与CCTO界面处聚积,形成空间电荷极化.
SiC particles were mixed with CCTO powders which were prepared firstly via conventional solid-state reaction. SiC/CCTO composite ceramic capacitors were prepared by hot pressing sintering. The DSC-TG technique was used to detect the thermal behaviors of SiC/CCTO composite powders. XRD and SEM techniques were used to characterize the samples. The effects of sintering processes on dielectric response of SiC/CCTO composites were investigated. It was found that the highest dielectric constant of sample via hot pressing process at 950 ℃ under 30 MPa was about 3.0×10~8 (at 1 kHz). The mechanism accords with the internal barrier layer capactior model. The charge carriers can be piled up at the interface between SiC and CCTO grains, resulting in polarization.
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