采用KrF脉冲准分子激光器烧蚀高阻多晶Si靶,分别在液氮冷却至200 K的高定向石墨(HOPG)和单晶Si(100)衬底上制备分散单晶Si纳米颗粒.采用拉曼谱(Raman)和高分辨透射电镜(HRTEM)分析证实Si纳米晶粒的形成.结果表明:所形成的纳米Si颗粒具有均匀分散性,相应的光致发光峰位出现在585 nm,峰值半高宽为70 nm;与相同参数下常温衬底的结果相比,所形成的纳米Si颗粒具有较窄的光致发光谱,并显示出谱峰蓝移现象;Si纳米颗粒尺寸的均匀分布是窄发光带的主要原因.
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