欢迎登录材料期刊网

材料期刊网

高级检索

采用液-固-溶液(LSS)法制备了ZnSe:Fe纳米晶,利用X射线粉末衍射(XRD)技术、透射电子显微镜(TEM)、光致发光(PL)谱、紫外-可见吸收(UV-vis)光谱以及傅里叶变换红外(FT-IR)光谱对所制备样品的结构和光学性质进行了表征,研究了掺杂Fe离子对ZnSe纳米晶光学性质的影响规律.实验结果表明所制备的ZnSe:Fe纳米晶为立方闪锌矿结构,粒径在3.5~4.5nm之间,与纯ZnSe相比,ZnSe:Fe纳米晶表现出明显的荧光增强现象,随掺杂Fe离子的浓度的不同,其荧光峰位和强度均有变化.UV-Vis吸收谱表明ZnSe:Fe纳米晶在410nm附近出现吸收峰,与ZnSe体材料相比有明显蓝移,为量子尺寸效应所致.利用Tauc关系计算了ZnSe:Fe纳米晶的能隙,为3.4eV.

参考文献

[1] Chan,WC;Nie,S .Quantum dot bioconjugates for ultrasensitive nonisotopic detection (see comments)[J].Science,1998(5385):2016-2018.
[2] Bruchez M;Moronne M;Gin P et al.[J].Science,1998,281:2013-2016.
[3] Valden M;Lai X;Goodman D W .[J].Science,1998,281(5383):1647-1650.
[4] Klmov V I;Mikhailovsky A A;Xu S et al.[J].Science,2000,290:314-317.
[5] Austin M. Derfus;Warren C. W. Chan;Sangeeta N. Bhatia .Probing the Cytotoxicity of Semiconductor Quantum Dots[J].Nano letters,2004(1):11-18.
[6] Cho SJ;Maysinger D;Jain M;Roder B;Hackbarth S;Winnik FM .Long-term exposure to CdTe quantum dots causes functional impairments in live cells[J].Langmuir: The ACS Journal of Surfaces and Colloids,2007(4):1974-1980.
[7] Sverbil P P;Gorelik V S;Karuzskii A L et al.[J].Inorganic Materials,2002,38(06):545-547.
[8] 么艳平,刘景和.ZnSe红外窗口材料的性能及其制备[J].人工晶体学报,2006(01):183-187.
[9] Jeon H;Ding J;Patterson W et al.[J].Applied Physics Letters,1991,59:3619-3621.
[10] Wherret B S .[J].Semiconductor Science and Technology,1991,6:A65-A71.
[11] Haase M A;Qiu J;Depuydt J M et al.[J].Applied Physics Letters,1991,59(11):1272-1274.
[12] Kato E.;Noguchi H. .Significant progress in Il-VI blue-green laser diode lifetime[J].Electronics Letters,1998(3):282-284.
[13] Reiss P .ZnSe based colloidal nanocrystals: Synthesis, shape control, core/shell, alloy and doped systems[J].New Journal of Chemistry,2007(11):1843-1852.
[14] Fujia Y;Terada T;Fujii S .[J].Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes Review Papers,1996,35:L473-L476.
[15] Yoshino K.;Yoneta M.;Ikari T.;Mikami H. .Photoluminescence and photoacoustic spectra of ZnSe bulk crystals and epitaxial layers[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2000(0):608-610.
[16] Jiang H Q;Che J;Li Z M et al.[J].Transactions of Nonferrous Metals Society of China,2006,16(z1):s419-s422.
[17] Peng Q.;Deng ZX.;Sun XM.;Li YD.;Dong YJ. .Low-temperature elemental-direct-reaction route to II-VI semiconductor nanocrystalline ZnSe and CdSe[J].Inorganic Chemistry: A Research Journal that Includes Bioinorganic, Catalytic, Organometallic, Solid-State, and Synthetic Chemistry and Reaction Dynamics,2001(16):3840-0.
[18] Gong Hua;Huang Hui;Wang Minqiang et al.[J].Ceramics International,2007,33(07):1381-1384.
[19] Xu SJ.;Liu B.;Gan LM.;Chew CH.;Xu GQ.;Chua SJ. .Luminescence characteristics of impurities-activated ZnS nanocrystals prepared in microemulsion with hydrothermal treatment[J].Applied physics letters,1998(4):478-480.
[20] Suyver J F;Meester R;Kelly J J et al.[J].Physical Review,2001,B64:235408.
[21] Jung D R;Son D;Kim J et al.[J].Applied Physics Letters,2008,93:163118.
[22] 黄继武.MDI Jade使用手册[M].长沙:中南大学,2006:33.
[23] Thangadurai P;Balaji S;Manoharan P T .[J].Nanotechnology,2008,19:435708.
[24] P. K. Ghosh;S. Jana;S. Nandy;K. K. Chattopadhyay .Size-dependent optical and dielectric properties of nanocrystalline ZnS thin films synthesized via rf-magnetron sputtering technique[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2007(3):505-514.
[25] Mohagheghpour E;Rabiee M;Moztarzadeh F et al.[J].Materials Science and Engineering C:Biomimetic and Supramolecular Systems,2009,29:1842-1848.
[26] Song Limei;Gao Jianhua;Song Ruijuan .[J].Journal of Luminescence,2010,130:1179-1182.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%