在充分考虑电子枪栅极的工作环境后,对铪(Hf)栅极进行了800、900和1000℃的真空退火处理,对其组织、织构特点进行了分析,并利用离子束辅助沉积技术在Ba-W阴极表面分别沉积金属钼膜和铪膜,以模拟栅控行波管中钼栅极和铪栅极表面吸附阴极蒸发物质时的表面状态,测试了这两种栅极表面“热电子发射”能力和“二次电子发射”系数.结果表明,随着退火温度的升高,铪(Hf)栅极的结晶度、晶粒尺寸增加,织构减少,铪的最佳退火温度为900℃,铪栅极表面吸附的阴极发射物质要远少于钼栅极,用金属铪作栅极材料能有效抑制栅电子发射.
参考文献
| [1] | Hass G A;Shih A .Study of high work function mat erials needed for close-spaced grid applicat ions[J].Applications of Surface Science,1980,4:104-126. |
| [2] | Lu Y H;Wu X M;Liu X H et al.Study on suppression mechanism of electron emission from Mo grid with carbon film by dual ion beam deposition[J].Korean Phys Soc,2004,45(3):725. |
| [3] | Dzbanovskii NN;Minakov PV;Pilevskii AA;Rakhimov AT;Seleznev BV;Suetin NV;Yur'ev AY .High-current electron gun with a field-emission cathode and diamond grid[J].Technical physics,2005(10):1360-1362. |
| [4] | Green M;Goeser G .Deposition techniques for restrained emission[J].Final Report,Contract,1968,10:2270-2275. |
| [5] | Ma T J;Zhao S K;Deng F et al.Research on properties of Cr-Ni coatings prepared on pyrolytic graphite by arc ion plating[J].Physics Procedia,2012,32:748-752. |
| [6] | M iram GV;Lien E L.Convergent electron gun with bonded nonintercepting control grid[A].,1979:290-292. |
| [7] | Howald R .A 24 GHz HEMT microstrip oscillator using linear and nolinear CAD techniques[J].Microwave Journal,1994,5:81-93. |
| [8] | Payen F;Villette B.Dual-Mooe Coupled Cavity TWT[M].Military Microwaves,1986:24-26. |
| [9] | Kanaya K;Kawakatsu H .Secondary electron emission due to primary and backscattered electrons[J].Journal of Physics D:Applied Physics,1972,5:1727-1741. |
| [10] | Verhoren J;Doveren H van .XPS studies on Ba BaO and the oxidation of Ba[J].Applications of Surface Science,1980,5:361-373. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%