采用高温高压方法制备了热电材料Ag_(0.08)Pb_(18)SbTe_(20),测试发现样品具有微米级晶粒和单相的NaCl结构.高压合成的Ag_(0.8)Pb_(18)SbTe_(20)样品为N型半导体,电阻率和Seebeck系数的绝对值随温度的升高而增大.同其它方法制备的AgPb_(18)SbTe_(20)体系材料相比,高温高压方法制备的样品具有较低的电阻率.较低的电阻率导致了较大的功率因子(S~2σ_(max)≈17.2μW/cm~(-1)K~(-2),T≈585 K).
Although it has been reported that the AgPb_mSbTe_(m+2) (m = 18) based material has the maximum thermoelectric (TE) performance (ZT～2.2) in bulk TE materials, conflicting reports on the same materials claim only ZT of 1 or less. The main reason is that the samples reported by other pursuers have low power factor because of their higher resistivity than that of Hus's. In this paper, Ag_(0.8) Pb_(18)SbTe_(20) was fabricated successfully by high pressure and high temperature (HPHT) method. The microstructure and temperature-dependent electrical properties including the Seebeck coefficient and the electrical resistivity were studied. The sample prepared by HPHT has much lower resistivity compared with that of the samples prepared by other methods at normal pressure. The enhanced power factor, 17.2 μW/(cmK~2) was obtained at 585 K for the HPHT synthesized Ag_(0.8) Pb_(18) SbTe_(20) sample. High thermoelectric performance for AgPb_(18) SbTe_(20) was expected by further and systematic study using HPHT technique.
参考文献
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