采用射频磁控溅射法,在不同的Ar∶O2条件下,以高掺磷n型Si衬底为磷掺杂源制备了p型ZnO薄膜和p-ZnO/n-Si异质结.对ZnO∶P薄膜进行了光致发光谱(PL)、霍尔参数、Ⅰ-Ⅴ特性、扫描电镜(SEM)和X射线衍射谱(XRD)等测试.结果表明,获得的ZnO∶P薄膜沿(0002)晶面高取向生长,以3.33 eV近带边紫外发光为主,伴有2.69 eV附近的深能级绿色发光峰,空穴浓度为8.982 × 1017/cm3,空穴迁移率为9.595 cm2/V·s,p-ZnO/n-Si异质结I-V整流特性明显,表明ZnO∶P薄膜具有p型导电特性.
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