欢迎登录材料期刊网

材料期刊网

高级检索

用射频共溅射技术和后退火的方法,制备出埋入SiO2基质中的Ge纳米晶复合膜(nc-Ge/SiO2).通过拉曼散射、光致发光和透射电子显微镜等手段研究了该复合膜的光学特性和薄膜结构.

参考文献

[1] CanhamLT .[J].Applied Physics Letters,1990,57:1046.
[2] MaedaY;Tsukamot N et al.[J].Applied Physics Letters,1991,59:3168.
[3] MaedaY .[J].Phus Rev,1995,51:1658.
[4] KanemitsuY;Ogawa T et al.[J].Physical Review,1993,48:4883.
[5] HayashiS;Kataoka M;Yamamoto K .[J].Japanese Journal of Applied Physics,1993,32:1274.
[6] 董业民,陈静,汤乃云,叶春暖,吴雪梅,诸葛兰剑,姚伟国.Ge-SiO2薄膜的光致发光及其机制[J].科学通报,2001(06):525-528.
[7] ChoiSukho;Han Sungchul;Hwang Suntae .[J].Thin Solid Films,2002,413:177.
[8] 翟继卫,杨合情,张良莹,姚熹.溶胶-凝胶法制备Ge/SiO2微晶复合薄膜[J].材料科学与工程,1999(04):14-16.
[9] SasakiY;Horie C .[J].Physical Review,1993,47:3811.
[10] MaSY;Ma Z C;Zhang W H .[J].Materials Research Bulletin,1997,32:1427.
[11] Ma SY.;Zong WH.;Han HX.;Wang ZP.;Li GH.;Qin G.;Qin GG.;Ma ZC. .Photoluminescence from nanometer Ge particle embedded Si oxide films[J].Journal of Applied Physics,1998(1):559-563.
[12] CampollTH;Fauchet P M .[J].Solid State communications,1986,58:739.
[13] 张仿清;郭永平;宁志忠 等.[J].无机材料学报,1993,8:99.
[14] FujiiM;Hayashi S;Yamamoto K .[J].Japanese Journal of Applied Physics,1991,30:687.
[15] MaedaY .[J].Physical Review,1991,51:1658.
[16] OkuT;Nakayama T et al.[J].Materials Science and Engineering,2000,74:242.
[17] Fukuda H.;Endoh T.;Nomura S.;Sakai A.;Ueda Y.;Kobayashi T. .Growth and characterization of Ge nanocrystals in ultrathin SiO2 films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,1998(0):776-780.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%