隧道磁电阻具有饱和磁场低、工作磁场小、灵敏度高、温度系数小等优点,在磁随机存取存储器(MRAM)、TMR磁头和磁传感器等自旋电子器件上颇受欢迎,有着广阔的应用前景.重点介绍了隧道磁电阻效应中自旋相关输运特点及原理,阐述了最近几年国内外最新研究进展,最后讨论了隧道磁电阻效应在实际应用中所面临的一些问题.
The tunneling magnetoresistance(TMR) effect has promising applications in the spin-electronic decvices such as magnetic random access memory(MRAM), TMR-read heads and magnetic sensors because it has the properties of smaller saturated field, lower power consumption, better sensitivity, lower temperature coefficient etc.Transimission principle of spin related TMR effect is described at the beginning. Then the latest research results are shown. In the end, the challenges of TMR effect in further application are discussed.
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