利用化学溶液途径成功地制备出了符合化学计量比的钼酸钙多晶薄膜.通过旋涂技术将薄膜沉积在Si(100)或载玻片上,并利用SEM技术表征了薄膜的表面形貌,以及薄膜的表面随退火温度变化的特征.X射线衍射结果显示,在溶液中,钼酸钙化合物就已直接生成而不需经过任何中间过程.退火温度对钼酸钙薄膜微观结构的影响研究表明,当退火高于550℃时薄膜的生长具有择优取向特征.钼酸钙薄膜的拉曼光谱测试结果进一步表明了钼酸钙薄膜的四方相结构特征以及薄膜微观结构的均一性.此外,本文还报道了不同温度下测得的钼酸钙薄膜在紫外光激发下的光致发光性质,其研究结果表明,在276 nm的紫外光激发下,钼酸钙薄膜具有一个宽的(～200 nm)绿光发射带.
Stuichiometric CaMoO4 thin films were successfully synthesized by chemical solution processing.By means of spin-coating technique,the thin films were deposited on Si(100)or glass substrates.The surface morphology evolution of the thin films on Si(100)substrate on annealing temperature were studied by SEM.X-ray diffraction patterns of CaMoO4 thin films prepared reveal that calcium molybdate grows in the solution by one step without any interim compounds,and the thin films are characteristic of oriented growth when the annealing temperature above 550℃.The results of Raman analysis of CaMoO4 thin films confirm the homogeneity of the film.The photoluminescence properties are measured at different temperatures under ultraviolet(UV)light excitation.The prepared CaMoO4 thin films exhibit a broad(～200 nm)green emission band when the films are excited by 276 nm radiation.All the results confirm that the chemical solution processing used in present work is an inexpensive and high productive route for the preparation of CaMoO4 thin films.
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