掺杂ZnO薄膜的研究现状

材料导报, 2008, 22(z1): 274-286.

掺杂ZnO薄膜的研究现状

文军 ^1, , 陈长乐 ^2, , 潘峰 ^3, , 吴小丽 ^4, , 张修兴 ^5,

1.西北工业大学应用物理系,西安,710072;渭南师范学院物理系,渭南,714000

2.西北工业大学应用物理系,西安,710072

3.西北工业大学应用物理系,西安,710072;陕西理工学院物理系,汉中,723001

4.西北工业大学应用物理系,西安,710072

5.渭南师范学院物理系,渭南,714000

关键词： ZnO薄膜 , P型掺杂 , 稀土掺杂 , 受激发光 , 稀磁半导体

Recent Research Progress in Doped ZnO Thin Films

ZnO薄膜的性质取决于不同的掺杂元素和不同的制备工艺.概述了掺杂ZnO薄膜的研究现状,分析了不同掺杂组分对ZnO薄膜的p型转变特性、发光特性以及铁磁性质的影响,认为稀土掺杂可能使ZnO薄膜产生新的发光特性,共掺杂技术可能是实现ZnO薄膜特性改变的新途径.

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掺杂ZnO薄膜的研究现状

Recent Research Progress in Doped ZnO Thin Films

参考文献