采用Cd0.9Zn0.1Te晶体作为溅射靶在玻璃衬底上利用磁控溅射法制备出CdZnTe薄膜,研究了溅射功率对CdZnTe薄膜的成分、结构特性的影响。制备的CdZnTe薄膜是具有闪锌矿结构的多晶薄膜,沿（111）择优取向。随着溅射功率的增大,薄膜沉积速率增大,薄膜结晶质量提高。采用晶体靶Cd0.9Zn0.1Te溅射CdZnTe薄膜时,无论是在何种功率下CdZnTe薄膜中的Cd原子成分均高于Te原子成分,Cd原子表现为择优溅射原子。
CdZnTe films were prepared by radio frequency（R.F.） magnetron sputtering from Cd0.9Zn0.1Te crystals target with different sputtering power（60-120 W）.The effects of sputtering power on the composition and structural properties of CdZnTe films were studied.CZT has a cubic zinc-blende structure of main（111） peak.As the increase of the sputtering power,the deposition rate and crystallinity of the films increases.The Cd atomic composition was higher than the Te atomic composition at any sputtering power.This behavior may be explained by the preferential sputtering of cadmium atoms rather than tellurium atoms in Cd0.9Zn0.1Te crystal target.
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