采用光学浮区法生长了BiFe1-xCoxO3(x=0、0.01、0.03、0.05、0.07、0.09、0.11)晶体.研究了生长温度、旋转速度、生长速度、有无气体冷却等工艺条件对熔区稳定和样品品质的影响.通过生长参数的优化,获得了尺寸为φ(8～12) mm×(60～120)mm的晶体.测试的磁滞回线表明,随着Co掺杂比例的提高,室温下反铁磁性能逐渐增强,当x=0.11时,饱和磁化强度达到了5.5 emu/g;介电温谱显示,5％ Co掺杂样品的尼尔温度达到320℃的最低值,介电常数因Co替代Fe的比例增加而发生变化.
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