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采用溶液化学方法制备了Er3+掺杂浓度为lat%的Er∶GaN微纳米晶材料.对退火前后材料的结构、形貌和发光性能进行了表征.结果表明:Er∶ GaN微纳米晶样品为纯的六方GaN相.退火后出现晶粒长大现象,且氧含量降低,微纳米晶的结晶质量变好.退火处理后出现了Er3+相关的524 nm和547 nm的绿光峰,660 nm的红光峰.在980 nm激发下,在Yb,Er∶GaN微纳米晶样品中实现了上转换荧光发射,并观察到了和Er∶ GaN微纳米晶相同的发光峰.

参考文献

[1] John Edmond;Amber Abare;Mike Bergman;Jayesh Bharathan;Kristin Lee Bunker;Dave Emerson;Kevin Haberern;James Ibbetson;Michael Leung;Phil Russel;David Slater .High efficiency GaN-based LEDs and lasers on SiC[J].Journal of Crystal Growth,2004(1/4):242-250.
[2] 李亮,李忠辉,罗伟科,董逊,彭大青,张东国.高质量GaN薄膜的MOCVD同质外延生长[J].人工晶体学报,2013(05):915-917.
[3] 周海涛,李东平,何小玲,张昌龙.氨热法生长氮化镓体单晶的工艺与设备[J].硅酸盐通报,2013(10):2046-2050,2056.
[4] Favennec P.N.;L'Haridon H. .Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials[J].Electronics Letters,1989(11):718-719.
[5] Steckl A.J.;Heikenfeld J.C.;Dong-Seon Lee;Garter M.J.;Baker C.C.;Yongqiang Wang;Jones R. .Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices[J].IEEE journal of selected topics in quantum electronics: A publication of the IEEE Lasers and Electro-optics Society,2002(4):749-766.
[6] Steckl AJ.;Birkhahn R. .Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy[J].Applied physics letters,1998(12):1700-1702.
[7] O. Contreras;S. Srinivasan;F. A. Ponce;G. A. Hirata;F. Ramos;J. McKittrick .Microstructural properties of Eu-doped GaN luminescent powders[J].Applied physics letters,2002(11):1993-1995.
[8] Genevieve Mialon;Silvan Turkcan;Geraldine Dantelle .High Up-Conversion Efficiency of YVO4:Yb,Er Nanoparticles in Water down to the Single-Particle Level[J].The journal of physical chemistry, C. Nanomaterials and interfaces,2010(51):22449-22454.
[9] Michael A. Reshchikov;Hadis Morkoc .Luminescence properties of defects in GaN[J].Journal of Applied Physics,2005(6):061301-1-061301-95-0.
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