硅材料是现代信息科技的主要载体,而其电化学研究则是正确认识和应用硅材料的前提和基础.从硅的表面和界面特性出发,综述了硅的电化学方面的研究进展,阐述了硅电极的阳极和阴极反应行为,总结了硅的刻蚀以及多孔硅的电化学形成机制和影响因素,并进一步展望了硅材料电化学研究的未来发展方向.
参考文献
| [1] | 王占国.[J].世界科技研究与发展,1998(05):51. |
| [2] | Shimura F.Semiconductor silicon crystal technology[M].San Diego:Academic Press,1990 |
| [3] | Hesketh P J;Gowda C J S;Zanoria E .[J].Journal of the Electrochemical Society,1993,140:1080. |
| [4] | Dove P M;Rimstidt J D.Silicon-water interactions[A].Review in Mineralogy,Mineralogical Society of America,Washington D C,1994:258. |
| [5] | Filho S G S;Hasenack L C;Salay L C .[J].Journal of the Electrochemical Society,1995,142:195. |
| [6] | Ljungberg K U J;Bengtsson S;Doderbag A .[J].Journal of the Electrochemical Society,1996,143:1709. |
| [7] | Watanabe S;Shigeno M;Nakayama N .[J].Japanese Journal of Applied Physics,1991,29:3575. |
| [8] | Bertagna V;Plougonven C;Rouelle F .[J].Journal of the Electrochemical Society,1995,142:3532. |
| [9] | Chen LC.;Lien CH.;Wan CC.;Chen MJ. .THE BAND MODEL AND THE ETCHING MECHANISM OF SILICON IN AQUEOUS KOH[J].Journal of the Electrochemical Society,1995(1):170-176. |
| [10] | 宋焱焱,张禹,夏兴华.碱性水溶液中甲醛在硅电极表面的电化学行为及其对硅化学刻蚀的影响[J].化学学报,2004(15):1415-1418. |
| [11] | Turner D R .[J].Journal of the Electrochemical Society,1958,105:402. |
| [12] | Memming R;Schwandt G .[J].Surface Science,1966,4:109. |
| [13] | Allongue P;Osta-Kieling V C;Gerischer H .[J].Journal of the Electrochemical Society,1993,140:1018. |
| [14] | Oskam G.;Natarajan A.;Searson PC.;Long JG. .Electrochemical deposition of metals onto silicon [Review][J].Journal of Physics, D. Applied Physics: A Europhysics Journal,1998(16):1927-1949. |
| [15] | Atsumura M M;Fukidome H .[J].Journal of the Electrochemical Society,1996,143:2683. |
| [16] | 程璇,林昌健.半导体硅片的P-n结和铜沉积行为的电化学研究[J].半导体学报,2000(05):509-516. |
| [17] | Bailes M;Bohm S;Peter L M .[J].Electrochimica Acta,1998,43:1771. |
| [18] | Canham L T .[J].Applied Physics Letters,1990,57:1046. |
| [19] | 王海燕,孙晓峰,张宇翔,李维强,卢景霄.多孔硅的光电性质及在太阳能电池中的应用[J].激光与光电子学进展,2005(02):52-56. |
| [20] | 王晓静,李清山,王佐臣.多孔硅的不同制备方法及其光致发光[J].发光学报,2003(02):203-207. |
| [21] | Lim P;Brock J R;Trachtenberg I .[J].Applied Physics Letters,1992,60(40):486. |
| [22] | Chen Qianwang;Qian Yitai;Chen Zuyao .[J].Applied Physics Letters,1995,66(13):1608. |
| [23] | Hummel R E;Chang Sung-Sik .[J].Applied Physics Letters,1992,61(16):1965. |
| [24] | Hou Xiaoyuan;Fan Honglei;Xu Lei .[J].Applied Physics Letters,1996,68(17):2323. |
| [25] | 周卫,福田芳雄,古屋一夫.多孔硅层湿法腐蚀现象的研究[J].电子元件与材料,2000(05):7-8. |
| [26] | Alexandra Splinter;Jorg Sturmann;Wolfgang Benecke .[J].Sensors and Actuators,2001,92:394. |
| [27] | 柯见洪,郑亦庄,池贤兴,程新红.多孔硅PL谱的影响因素分析[J].半导体学报,2002(01):38-42. |
| [28] | 田斌,胡明,张之圣.用电化学方法制备多孔硅[J].天津大学学报,2004(09):823-826. |
| [29] | 徐少辉,熊祖洪,顾岚岚,柳毅,丁训民,侯晓远.电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔[J].半导体学报,2002(03):272-275. |
| [30] | 叶超,宁兆元,程珊华.用脉冲电化学法在低HF浓度下制备多孔硅的研究[J].功能材料,2002(02):183-184,187. |
| [31] | 窦雁巍,胡明,宗杨,崔梦.MEMS中多孔硅绝热技术[J].纳米技术与精密工程,2005(02):106-111. |
| [32] | 韩建忠,倪国强,崔梦,胡明,田斌.应用于MEMS的多孔硅的制备方法研究[J].电子元件与材料,2004(06):32-34. |
| [33] | Chazalviet J N;Wshrspohn R B;Ozanam F .[J].Materials Science and Engineering,2000,B69-70:1. |
| [34] | Lehnmann V;Stengl R;Luigart A .[J].Materials Science and Engineering,2000,B69:11. |
| [35] | Rifai M.H.A.;Christophersen M. .Dependence of Macropore Formation in n-Si on Potential, Temperature, and Doping[J].Journal of the Electrochemical Society,2000(2):627-635. |
| [36] | Lehmann V.;Roennebeck S. .Physics of macropore formation in low-doped p-type silicon[J].Journal of the Electrochemical Society,1999(8):2968-2975. |
| [37] | 彭爱华,谢二庆,贾昌文,蒋然,林洪峰,贺德衍.稀土掺杂多孔硅的蓝光发射[J].物理学报,2004(05):1562-1566. |
| [38] | 彭爱华,谢二庆,姜宁,张志敏,李鹏,贺德衍.稀土（Tb,Gd）掺杂多孔硅的光致发光性能研究[J].物理学报,2003(07):1792-1796. |
| [39] | 张晓霞,谢国伟,石建新,罗莉,黄伟国,龚孟濂.钇对掺铒多孔硅体系1.54μm发光的增强作用[J].化学学报,2003(09):1430-1433. |
| [40] | 王水凤,姜乐,元美玲,唐小迅.酸处理多孔硅高效发光性能[J].南昌大学学报(理科版),2004(01):66-68. |
| [41] | Zhang Xiaoge.Electrochemistry of silicon and its oxide[M].New York:Kluwer Academic/Plenum Publishers,2001 |
| [42] | 王晓静,李清山.多孔硅研究的发展[J].液晶与显示,2003(06):421-427. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%