为研究含氢类金刚石(a-C:H)薄膜的制备及性能,充入含-CH3原子团的CH4气体,在不同CH4/Ar流量比条件下于N型硅基底上沉积a-C:H薄膜,并借助椭偏仪、非接触式白光干涉仪及激光波面干涉仪对薄膜的沉积速率及表面粗糙度进行测定.结果表明,含氢碳源气体的加入提高了类金刚石薄膜的沉积速率,改善了表面平整度.
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