两步法制备Y_2O_3掺杂ZnO压敏瓷

材料导报, 2010, 24(6): 78-85.

两步法制备Y_2O_3掺杂ZnO压敏瓷

徐东 ^1, , 巫欣欣 ^2, , 程晓农 ^3, , 张剑平 ^4, , 施利毅 ^5,

1.江苏大学材料科学与工程学院,镇江,212013

2.上海大学纳米科学与技术研究中心,上海,200444;上海大学理学院,上海,200444

3.江苏大学材料科学与工程学院,镇江,212013

4.上海大学纳米科学与技术研究中心,上海,200444

5.上海大学纳米科学与技术研究中心,上海,200444

基金项目: 上海市科委技术创新人才团队建设专项项目(06DZ05902)

关键词：压敏瓷 , 两步烧结 , 稀土 , 显微组织 , 电性能

Y_2O_3-doped ZnO-based Varistors Ceramics by Two-step Sintering Method

XU Dong ^1, , WU Xinxin ^2, , CHENG Xiaonong ^3, , ZHANG Jianping ^4, , SHI Liyi ^5,

1.江苏大学材料科学与工程学院,镇江,212013

2.上海大学纳米科学与技术研究中心,上海,200444;上海大学理学院,上海,200444

3.江苏大学材料科学与工程学院,镇江,212013

4.上海大学纳米科学与技术研究中心,上海,200444

5.上海大学纳米科学与技术研究中心,上海,200444

Keywords： varistors , two-step sintering , rare earths , microstructure , electrical properties

采用两步烧结制备了Y_2O_3掺杂ZnO压敏瓷,其电位梯度为863～1330V/mm,非线性系数为27.0～49.7,漏电流为0.55～1.13μA.研究结果表明,当Y_2C_3的掺杂量为1.00%(摩尔分数)时,压敏瓷电性能最好,电位梯度为1330V/mm,非线性系数为49.7,漏电流为0.76μA.

Y_2O_3-doped ZnO-based varistor ceramics are prepared by two-step sintering method, the voltage gradient is 863~1330V/mm, non-linear coefficient is 27. 0~49. 7, and leakage current is 0. 55~1.13μA. The results show that Y_2O_3-doped ZnO-based varistor ceramics exhibit comparatively ideal comprehensive electrical properties when adding 1. 00mol% Y_2O_3, the threshold voltage is 1330V/mm, the nonlinear coefficient is 49. 7, and the leakage current is 0. 76μA.

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