欢迎登录材料期刊网

材料期刊网

中国科学院金属研究所 科学出版社
高级检索
  1. 首页
  2. 期刊
  3. 材料导报
  4. 磁场在晶体生长中的应用

材料导报, 2014, 28(13): 72-77.

磁场在晶体生长中的应用

狄晨莹 1, , 左然 2, , 苏文佳 3,

1.江苏大学能源与动力学院,镇江,212013

2.江苏大学能源与动力学院,镇江,212013

3.江苏大学能源与动力学院,镇江,212013

基金项目:   江苏省自然科学青年基金(BK2012295)   高等学校博士学科点专项科研基金(20123227120017)   江苏大学高级专业人才启动基金(1281130015)   国家自然科学基金青年基金(51206069)  

关键词： 静态磁场 , 动态磁场 , 晶体生长 , 熔体对流 , 单晶硅 , 多晶硅

Review on Magnetic Field Applied in Crystal Growth

Keywords： static magnetic field , non-static magnetic field , crystal growth , melt flow , mono-silicon , multicrystalline silicon

针对磁场在晶体生长中的应用,综述了近年来该领域数值模拟和实验研究的进展,包括静态磁场和动态磁场的产生原理及其在晶体生长中的效应.分析了晶体生长过程中存在的主要流动.综述了晶体生长过程中磁场力对导电熔体对流、固液界面形貌和杂质分布的影响,重点分析了磁场在直拉法单晶硅和定向凝固法多晶硅生长过程中的应用,总结了该领域当前存在的问题及其发展趋势.

参考文献

[1] Dhanaraj G;Byrappa K.Handbook of crystal growth[M].Berlin:Springer-Verlag,2010:1215.
[2] Lan CW .Recent progress of crystal growth modeling and growth control[J].Chemical Engineering Science,2004(7):1437-1457.
[3] Rosenberger F.Fundamentals of crystal growth I[M].Berlin:Springer-Verlag,1979:366.
[4] Kakimoto K .Flow instability during crystal growth form the melt[J].PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,1995,30(2-3):191.
[5] Brown R A .Theory of transport processes in single crystal growth from the melt[J].Am Inst Chem Eng,1988,34(01):881.
[6] Teng Y Y;Chen C J et al.The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process[J].Journal of Crystal Growth,2010,312(7-8):1282.
[7] 闵乃本.晶体生长的物理基础[M].上海:上海科学技术出版社,1982:192.
[8] Morton JL.;Ma N.;Bliss DF.;Bryant GG. .Magnetic field effects during liquid-encapsulated Czochralski growth of doped photonic semiconductor crystals[J].Journal of Crystal Growth,2003(1/2):174-182.
[9] Walker JS.;Henry D.;BenHadid H. .Magnetic stabilization of the buoyant convection in the liquid-encapsulated Czochralski process[J].Journal of Crystal Growth,2002(1):108-116.
[10] A. Muiznieks;A. Krauze;B. Nacke .Convective phenomena in large melts including magnetic fields[J].Journal of Crystal Growth,2007(1):211-220.
[11] 尹志华.半导体材料原理与基础[M].北京:化学工业出版社,2011:180.
[12] Dadzis K .Modeling of directional solidification of multicrystalline silicon in a traveling magnetic field[D].Germany:Solar World Innovation Gmbh,2012.
[13] Spitzer KH. .Application of rotating magnetic fields in Czochralski crystal growth [Review][J].Progress in Crystal Growth and Characterization of Materials,1999(1/4):39-58.
[14] Gelfgat Yu M;Kumin J et al.Rotation magnetic fields as a means to control the hydrodynamics and heat transfer in silicon crystal growth process[J].PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,1999,39(1-4):59.
[15] Dold P;Benz K W .Rotation magnetic fields:Fluid flow and crystal growth applications[J].PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS,1999,38(1-4):39.
[16] Vozl M P;Walker J S et al.Bridgman growth of germanium crystal in a rotation magnetic field[J].Journal of Crystal Growth,2005,282(3-4):305.
[17] Konstantin Mazuruk .Control of melt convection using traveling magnetic fields[J].Advances in Space Research: The Official Journal of the Committee on Space Research(COSPAR),2002(4):541-548.
[18] Rudolph, P .Travelling magnetic fields applied to bulk crystal growth from the melt: The step from basic research to industrial scale[J].Journal of Crystal Growth,2008(7/9):1298-1306.
[19] Krauze A;Muiznieks A;Muhlbauer A .Numerical 2D modeling of turbulent melt flow in CZ system with dynamic magnetic fields[J].Journal of Crystal Growth,2004,266(1-2):40.
[20] V. Galindo;I. Grants;R. Lantzsch;O. Patzold;G. Gerbeth .Numerical and experimental modeling of the melt flow in a traveling magnetic field for vertical gradient freeze crystal growth[J].Journal of Crystal Growth,2007(1):258-261.
[21] R. Lantzsch;V. Galindo;I. Grants;C. Zhang;O. Paetzold;G. Gerbeth;M. Stelter .Experimental and numerical results on the fluid flow driven by a traveling magnetic field[J].Journal of Crystal Growth,2007(1):249-256.
[22] Schwesig P;Hainke M et al.Numerical simulation of the effects of rotating and traveling magnetic fields on the interface shape and thermal stress in the VGF growth of InP crystals[J].Journal of Crystal Growth,2004,266(01):224.
[23] Lyubimova T P;Croll A et al.Time-dependent magnetic field influence on GaAs crystal growth by vertical Bridgman method[J].Journal of Crystal Growth,2004,266(01):404.
[24] Watanabe M.;Hibiya T.;Kakimoto K.;Yi KW. .Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation [Review][J].Progress in Crystal Growth and Characterization of Materials,1999(1/4):215-238.
[25] V. Savolainen;J. Heikonen;J. Ruokolainen .Simulation of large-scale silicon melt flow in magnetic Czochralski growth[J].Journal of Crystal Growth,2002(2):243-260.
[26] Vizman D et al.Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields[J].Journal of Crystal Growth,2001,230(1-2):73.
[27] Vizman D.;Grabner O.;Muller G. .3D numerical simulation and experimental investigations of melt flow in an Si Czochralski melt under the influence of a cusp-magnetic field[J].Journal of Crystal Growth,2002(4):545-550.
[28] Liu X;Liu L J .Effect of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth[J].Journal of Crystal Growth,2012,360(01):38.
[29] Liu L J;Kakimoto K .3D global analysis of CZ-Si growth in a transverse magnetic field with various crystal growth rates[J].Journal of Crystal Growth,2005,275(1-2):1521.
[30] Liu LJ;Nakano S;Kakimoto K .An analysis of temperature distribution near the melt-crystal interface in silicon Czochralski growth with a transverse magnetic field[J].Journal of Crystal Growth,2005(1/2):49-59.
[31] Kakimoto K;Liu L J .Analysis of segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method[J].Journal of Crystal Growth,2009,311(08):2313.
[32] Jana S;Dost S et al.A numerical simulation study for the Czochratski growth process of Si under magnetic field[J].International Journal of Engineering Science,2006,44(8-9):554.
[33] Xiaoming Zhou;Hulin Huang .Numerical simulation of Cz crystal growth in rotating magnetic field with crystal and crucible rotations[J].Journal of Crystal Growth,2012(1):166-170.
[34] Tanasie C;Viman D;Friedrich J .Numerical simulation of the influence of different types magnetic fields on the interface shape in a direction solidification of multi-crystalline silicon ingots[J].Journal of Crystal Growth,2011,318(1-2):293.
[35] Kiessling F M;Bullesfeld F et al.Characterization of mc-si directionally solidified in traveling magnetic field[J].Journal of Crystal Growth,2012,360(01):81.
[36] 罗玉峰,袁文佳,张发云,胡云,彭华厦.轴向磁场下多晶硅铸造过程的仿真模拟[J].铸造技术,2013(01):61-64.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
作者相关
文章评分
  • 您的评分：
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%

版权所有©2010中国科学院金属研究所中国科技出版传媒股份有限公司

本系统由北京仁和汇智信息技术有限公司设计开发

技术支持：info@rhhz.net