利用循环伏安方法和恒电位阶跃技术研究Ni-SiC复合镀层电沉积行为.结果表明:Ni-SiC复合镀层和纯Ni镀层的形核/生长过程符合Scharifker-Hill三维成核模型;在低过电位下,Ni-SiC复合镀层形核/生长过程按三维连续成核机制;高过电位下,形核/生长过程遵循瞬时成核机制,与纯Ni镀层的形核/生长过程具有一致性;无论Ni-SiC复合镀层还是纯Ni镀层,形核弛豫时间tm随负电位的增大呈现有规律递减趋势,相应的,Im值基本相近;SiC粉体的引入导致Ni形核的过电位正移和tm的显著减小.
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