本文采用导模法生长出了白宝石（1102）片晶和（0001）棒晶．在此基础上实验观察了白宝石单晶中的位错、亚晶界和小品面等缺陷的形态、数量及分布，讨论了生长条件对它们的影响．结果表明，晶体生长速率和籽晶质量是影响晶体缺陷的两个主要因素．
Sapphire (1102) ribbon and (0001) bar were prepared by tile EFG methods and its crystal defects, such as dislocation, subgrain boundary as well as faceting plane were investingated experimentally. The influence of growth process on crystal defects was discussed. It was found that crystal growth rate and the quality of seed crystals were the two critical factors ti.hich affect the formation of defects in sapphire single crystals.
参考文献
| [1] | Borodin V A, Ionov A M, Yalovets T N. J. Cryst. Growth, 1990, 104: 157--164 2 Novak R E, Metzl R, Drecben A, et al. J. Cryst. Growth, 1980, 50: 143--150 3 马胜利. 导模法生长白宝石单晶技术及热场分布研究. [硕士论文] 西?安: 西安理工大学, 1995. 4 Tatarchenko V A, Yalovets T N, Satankin G A. J. Cryst. Growth, 1980, 50: 335--340 5 劳迪斯 R A 著, 刘光照译. 单晶生长. 北京: 科学出版社, 1979. 128--130 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%