通过传统陶瓷制备工艺制备了致密的SnO2-Zn2SnO4复合陶瓷，研究了不同SnO2、Zn2SnO4复合比例对陶瓷介电性质的影响及其高介电性质产生的机理。研究发现，40Hz时，该复合陶瓷的相对介电常数高达10^4，远高于SnO^2、Zn2SnO4陶瓷，且样品的相对介电常数、导纳随组分的变化规律一致。进一步研究发现，样品的电容随着施加偏压的变化满足肖特基势垒电容公式，这表明，SnO2-Zn2SnO4复合陶瓷的高介电行为起源于晶界处的双肖特基势垒。
Densified SnO2-Zn2SnO4 composite ceramics were prepared using traditional ceramic technology. Theeffect of Zn2 SnO4 contents on the dielectric properties of the composite ceramics was investigated, as well as the mechanism of high dielectric properties. Relative dielectric permittivity of 85 mol % SnO2 +15mol% Zn2 SnO4 ce- ramics reached 104 at 40Hz, which was much higher than that of SnO2 and Zn2SnO4 ceramics. The dielectricproperties and admittance varied with Zn2SnO4 content simultaneously and further investigations showed that the high dielectric permittivity of SnO2-Zn2SnO4 composite ceramics were originated from the double Schottky barrier at grain boundary.
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