本文通过XRD和PL等分析方法研究了在Si衬底生长的GaN基LED外延薄膜n型GaN层和InGaN阱层的应力状态,以及裂纹对其应力状态的影响.XRD结果表明:在Si衬底生长的GaN基LED外延薄膜n型GaN层受到张应力,在受到一定的外加应力后会以裂纹及裂纹增生的方式释放.随着裂纹数量的增加,n型GaN层受到的张应力逐渐减小,但仍处于张应力状态;n型GaN层张应力的减小使得InGaN阱层受到的压应力增大.PL分析进一步表明:InGaN阱层受到的压应力增大使得量子限制Stark效应更加明显,禁带宽度减小,发光波长表现为红移.
参考文献
| [1] | Schubert EF;Kim JK;Luo H;Xi JQ .Solid-state lighting - a benevolent technology[J].Reports on Progress in Physics,2006(12):3069-3099. |
| [2] | Krames M.R.;Shchekin O.B.;Mueller-Mach R.;Mueller G.O.;Ling Zhou;Harbers G.;Craford M.G. .Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting[J].Journal of display technology,2007(2):160-175. |
| [3] | Nakamura S;Mukai T;Senoh M .Candela-class High-brightness InGaN/AlGaN Double-heterostructure Blue-light-emitting Diodes[J].Applied Physics Letters,1994,64(13):1687-1689. |
| [4] | Guha S.;Bojarczuk NA. .Ultraviolet and violet GaN light emitting diodes on silicon[J].Applied physics letters,1998(4):415-417. |
| [5] | Chuong A. Tran;A. Osinski;R. F. Karlicek .Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy[J].Applied physics letters,1999(11):1494-1496. |
| [6] | J. W. Yang;A. Lunev;G. Simin .Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates[J].Applied physics letters,2000(3):273-275. |
| [7] | Krost A.;Dadgar A. .GaN-based optoelectronics on silicon substrates[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2002(1/3):77-84. |
| [8] | Chunlan Mo;Wenqing Fang;Yong Pu;Hechu Liu;Fengyi Jiang .Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD[J].Journal of Crystal Growth,2005(3):312-317. |
| [9] | XIONG Chuanbing,JIANG Fengyi,FANG Wenqing,WANG Li,LIU Hechu,MO Chunnan.Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate[J].中国科学E辑（英文版）,2006(03):313-321. |
| [10] | Yang J W;Sun C J;Chen Q et al.High Quality GaN-InGaN Heterostructures Grown on (111) Silicon Substrates[J].Applied Physics Letters,1996,69(23):3566-3568. |
| [11] | S. A. Nikishin;N. N. Faleev;V. G. Antipov .High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia[J].Applied physics letters,1999(14):2073-2075. |
| [12] | X.H. Zheng;Y.T. Wang;Z.H. Feng;H. Yang;H. Chen;J.M. Zhou;J.W. Liang .Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)[J].Journal of Crystal Growth,2003(3/4):345-348. |
| [13] | 许振嘉.半导体的检测与分析(第二版)[M].北京:科学出版社,2007:100-126. |
| [14] | Kim D J;Moon Y T;Song K M et al.Effect of Barrier Thickness on the Interface and Optical Properties of InGaN/GaN Multiple Quantum Wells[J].Japanese Journal of Applied Physics,2001,40:3085-3088. |
| [15] | Bai J;Wang T;Sakai S et al.Study of the Strain Relaxation in InGaN/GaN Multiple Quantum Well Structures[J].Journal of Applied Physics,2001,9:1740. |
| [16] | Keith bowen D;Tanner B K.High Resolution X-ray Diffractometry and Topography[M].UK:Taylor & Francis e-Library,2005 |
| [17] | Xiong CB;Jiang FY;Fang WQ;Wang L;Mo CN;Liu HC .The characteristics of GaN-based blue LED on Si substrate[J].Journal of Luminescence: An Interdisciplinary Journal of Research on Excited State Processes in Condensed Matter,2007(0):185-187. |
| [18] | XIONG Chuanbing,JIANG Fengyi,FANG Wenqing,WANG Li,LIU Hechu,MO Chunnan.Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate[J].中国科学E辑（英文版）,2006(03):313-321. |
| [19] | Li J J;Liu L M;Yao D Z .Piezoelectric Field-dependent Optical Nonlinearities Induced by Interband Transition in InGaN/GaN Quantum Well[J].PHYSICA E,2005,27:221-226. |
| [20] | L.-H. Peng;C.-W. Chuang;L.-H. Lou .Piezoelectric effects in the optical properties of strained InGaN quantum wells[J].Applied physics letters,1999(6):795-797. |
| [21] | Piotr Perlin;Christian Kisielowski;Valentin Iota .InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy[J].Applied physics letters,1998(19/24):2778-2780. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%