欢迎登录材料期刊网

材料期刊网

高级检索

采用射频磁控溅射方法在玻璃基底上制备氮化铜薄膜,研究了氮氩混合气体中的氮气比例对薄膜择优生长取向、表面晶粒尺寸和微观力学性能的影响.结果表明:低氮气比例时,薄膜的纳米力学性能比较差;随着氮气比例的增加,氮化铜薄膜的择优生长晶面从(111)晶面转变为(100)晶面,晶粒尺寸变小,显微硬度增加,弹性模量则是先增加,后减小.

参考文献

[1] Yu W;Zhao JG;Jin CQ .Simultaneous softening of Cu3N phonon modes along the T-2 line under pressure: A first-principles calculation[J].Physical review, B. Condensed matter and materials physics,2005(21):4116-1-4116-8-0.
[2] Maruyama T.;Morishita T. .COPPER NITRIDE THIN FILMS PREPARED BY RADIO-FREQUENCY REACTIVE SPUTTERING[J].Journal of Applied Physics,1995(6):4104-4107.
[3] Toshikazu Nosaka;Masaaki Yoshitake;Akio Okamoto;Soichi Ogawa;Yoshikazu Nakayama .Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1999(12):8-13.
[4] Jianrong Xiao,Yanwei Li,Aihua Jiang.Structure, Optical Property and Thermal Stability of Copper Nitride Films Prepared by Reactive Radio Frequency Magnetron Sputtering[J].材料科学技术学报(英文版),2011(05):403-407.
[5] WANG Dao-yuan;NAKAMINE N;HAYASHI Y .Properties of Various Sputter-deposited Cu3N Films[J].Journal of Vacuum Science and Technology A:Vacuum Surfaces and Films,1998,16(04):2084-2092.
[6] MAYA L .Copper Nitride Thin Films Prepared by dc Sputtering[J].Materials Research Society Symposium Proceedings,1993,282:203-208.
[7] Nosaka T.;Okamoto A.;Ogawa S.;Nakayama Y.;Yoshitake M. .Thermal decomposition of copper nitride thin films and dots formation by electron beam writing[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2001(0):358-361.
[8] BLUCHER J;BANG K;GLESSEN B C .Preparation of the Metastable Interstitial Copper Nitride,Cu4N,by d.c.Plasmation Nitriding[J].Materials Science and Engineering A,1989,117:L1-L3.
[9] ASANO M;UMEDA K;TASAKI A .Cu3N Thin Film for a New Light Recording Media[J].Japanese Journal of Applied Physics,1990,29(10):1985-1986.
[10] MAYA L .Covalent Nitrides for Maskless Laser Writing of Microscopic Metal Lines[J].Materials Research Society Symposium Proceedings,1993,282:203-207.
[11] MARUYAMA T;MORISHITA T .Copper Nitride and Tin Nitride Thin Films for Write-once Optical Recording Media[J].Applied Physics Letters,1996,69(07):890-891.
[12] FENDRYCH F;SOUKUP L;JASTRABY'KA L et al.Cu3N Films Prepared by the Low-pressure R.F.Supersonic Plasma Jet Reactor Structure and Optical Properties[J].Diamond and Related Materials,1999,8:1715-1719.
[13] SOTO G;DIAZ J A;DE LA CRUZ W .Copper Nitride Films Produced by Reactive Pulsed Laser Deposition[J].Materials Letters,2003,57:4130-4133.
[14] 吴志国,张伟伟,白利峰,王君,阎鹏勋.纳米Cu3 N薄膜的制备与性能[J].物理学报,2005(04):1687-1692.
[15] Yue GH;Yan PX;Liu JZ;Wang MX;Li M;Yuan XM .Copper nitride thin film prepared by reactive radio-frequency magnetron sputtering[J].Journal of Applied Physics,2005(10):3506-1-3506-7-0.
[16] Ghosh S.;Choudhary D.;Avasthi DK.;Ganesan V.;Shah P.;Gupta A.;Singh F. .Effect of substrate temperature on the physical properties of copper nitride films by r.f. reactive sputtering[J].Surface & Coatings Technology,2001(0):1034-1039.
[17] 肖剑荣,徐慧,李燕峰,李明君.氮分压对氮化铜薄膜结构及光学带隙的影响[J].物理学报,2007(07):4169-4174.
[18] 肖剑荣,蒋爱华.氮化铜薄膜的研究[J].材料导报,2009(21):115-117.
[19] 袁晓梅,王君,吴志国,岳光辉,闫鹏勋.射频磁控溅射法制备Cu3N薄膜及其性能研究[J].人工晶体学报,2006(03):635-640.
[20] 岳光辉,闫鹏勋.氮化铜薄膜的制备及其物理性能[J].人工晶体学报,2005(01):149-154.
[21] PIERSON J F .Structure and Properties of Copper Nitride Films Formed by Reactive Magnetron Sputtering[J].VACUUM,2002,66:59-64.
[22] OLIVER W C;PHARR G M .An Improved Technique for Determining Hardness and Elastic Modulus Using Load and Displacement Sensing Indentation Experiments[J].Journal of Materials Research,1992,7(06):1564-1583.
[23] 张天林 .纳米压入技术中基底和针尖效应的研究[D].中国科学技术大学,2008.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%