在675~825℃、氮气气氛下,使用石墨模具压铸的方法制备出Al/A12O3电子陶瓷基板,利用力学拉伸试验机测试了Al和Al2O3的结合强度,界面抗拉强度>15.94MPa,使用金相显微镜、SEM等微观分析仪器研究了其界面的微观结构.
After getting rid of Al2O3 film from the surface of melting Al, Al can wet and bond Al2O3 substrate perfectly. In this work, by die-casting-bonding process, in the temperautre range of 948-1098K and under N2 atmosphere, Al/Al2O3 substrates were produced successfully. The performance of Al/Al2O3 substrates was investigated by SEM and mechanic testing equipment. The bonding strength of Al/Al2O3 measured is more than 15.94MPa.
参考文献
[1] | Sun Y S, Driscoll J C. IEEE Transactions on Electron Devices, 1976, 23 (8): 961--967. [2] Intrater J. Machine Design, 1989, 23: 95--100. [3] David R F. Electronic Paking and Production, 1996, March: 51--53. [4] Matthias Diemer, Achim Neubrand. J. Am. Ceram. Soc., 1999, 82 (10): 2825--2832. [5] Ning X S, Nagata C, Sakuraba M, et al. US Patent No. 5, 965, 193, 1999. [6] Jung W Y, Song H S. Metall. Mater. Trans. B 1996, 27 (1): 51--55. |
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