采用射频磁控溅射方法在LaAlO3(100)基片上制备了电荷有序态锰氧化物Sm0.5Ca0.sMnO3薄膜,X射线衍射分析表明所制备薄膜具有较好的外延特性.测试了薄膜的低电阻-温度关系,表明薄膜在测量温度范围内呈现半导体导电特性.施加磁场和激光辐照均可引起电荷有序态的退局域化,从而导致电阻减小.研究了激光诱导电阻变化弛豫特性,表明电阻随时问的变化符合指数关系,通过拟合得到的时间常数随着温度的升高而增加,分析表明其主要可归结于外在热效应的影响.
Charge-ordering Sm0.5Ca0.5Mn03film has been deposited on a(100)-LaAlO3 substrate by a RF magnetron sputtering method,and the X-ray diffraction analysis shows that the film has better epitaxial character.The film favors the semiconductor-type conduction with the increase of the temperature.The magnetic field and Iaser irradiation induce the reduction in the resistance of the film,which is attributed to the delocalization effect of manganites.The photoinduced relaxation effect of the film reveals that the resistance is exponentially dependent of the time and the time constant increases with increasing the temperature due to the growing thermal fluctuation.
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