以Zn粉为材料,采用CVD法在宽温区内可控生长ZnO纳米线.利用SEM对产物进行了微观分析,考察了反应温度与升温时间对ZnO纳米线形貌的影响.用ZnO纳米线制成光电导型紫外光探测器,并测试了该器件的性能,考察了所得ZnO纳米线的光电特性.研究工作表明:用CVD法制备ZnO纳米线时的反应温度不限于某一个特定值,而是常压下在419.5℃以上的温区内均可进行,该宽温区ZnO纳米线CVD合成法的关键在于优化和匹配生长温度与加热时间两个参数.对紫外光探测器的性能测试结果表明,ZnO纳米线具有良好的紫外光电响应特性.
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