采用美国滨州大学研发的AMPS-1D软件,模拟了背场对TCO/a-Si∶ H(p+)/a-Si∶ H(i)/c-Si(n) /a-Si∶ H(i) /a-Si∶ H(n+)/TCO双面HIT异质结太阳电池光伏特性的影响.结果表明在背场掺杂浓度NB≥1×1018cm-3时,带隙在1.60～ 1.92 eV范围内的宽带隙薄膜硅材料比较适合作为双面HIT太阳电池的背场.模拟中还发现,背场n+层掺杂浓度对太阳电池性能的影响要受到该层隙间态密度的制约,隙间态密度越大,则对背场掺杂浓度的要求越高.
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