用磁控溅射法制备了T0a2O5薄膜,再用C-V法和JFET外接薄膜电极法研究其稳定性和离子响应灵敏度.实验发现,在纯氧中沉积的厚200nmT2O5薄膜有较高的离子响应灵敏度和良好的稳定性.
The H+ sensitive behavior of Ta2O5 has ben reported on the letter. The magnetron-sputtering method was chosen for the Ta2O5 membranedeposition. C-V measurments of MIS structures were uesd for evaluatingthe stability of the membranes. It is shown that the
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