Defects in Graphene: Generation, Healing, and Their Effects on the Properties of Graphene: A Review

材料科学技术（英文）, 2015, 31(6): 599-606.

Lili Liu ^1, , Miaoqing Qing ^2, , Yibo Wang ^3, , Shimou Chen ^4,

1.Department of Chemistry, School of Science, Beijing Technology and Business University, Beijing 100048, China

2.Department of Chemistry, School of Science, Beijing Technology and Business University, Beijing 100048, China

3.Department of Chemistry, School of Science, Beijing Technology and Business University, Beijing 100048, China

4.Key Laboratory of Green Process and Engineering, Institute of Process Engineering(IPE), Chinese Academy of Sciences(CAS), Beijing 100190, China

基金项目: This work was supported by the National Natural Science Foundation of China (Nos.21276257 and 2110600) and the Research Foundation for Youth Scholars of Beijing Technology and Business University (No.QNJJ2014-14).

Defects in Graphene: Generation, Healing, and Their Effects on the Properties of Graphene: A Review

Keywords： Graphene

参考文献

[1]	M.M. Lucchese;F. Stauale;E.H. Martins Ferreira .Quantifying ion-induced defects and Raman relaxation length in graphene[J].Carbon: An International Journal Sponsored by the American Carbon Society,2010(5):1592-1597.
[2]	A.O. Monteiro;P.B. Cachim;P.M.F.J. Costa.Mechanics of filled carbon nanotubes[J].Diamond and Related Materials,2014:11-25.

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Defects in Graphene: Generation, Healing, and Their Effects on the Properties of Graphene: A Review

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