新型高k栅介质材料研究进展

功能材料, 2002, 33(4): 350-353.

新型高k栅介质材料研究进展

章宁琳 ^1, , 宋志棠 ^2, , 万青 ^3, , 林成鲁 ^4,

1.中国科学院上海冶金所信息功能材料国家重点实验室,上海,200050

2.中国科学院上海冶金所信息功能材料国家重点实验室,上海,200050

3.中国科学院上海冶金所信息功能材料国家重点实验室,上海,200050

4.中国科学院上海冶金所信息功能材料国家重点实验室,上海,200050

基金项目: 国家自然科学基金(69738020)

关键词： MOSFET , 高k材料 , 栅介质

Progress of studies on novel high k materials as gate dielectrics

随着半导体技术的不断发展,MOSFET (metal-oxide-semiconductor field effect transistor)的特征尺寸不断缩小,栅介质等效氧化物厚度已小至nm数量级.这时电子的直接隧穿效应将非常显著,将严重影响器件的稳定性和可靠性.因此需要寻找新型高k介质材料,能够在保持和增大栅极电容的同时,使介质层仍保持足够的物理厚度来限制隧穿效应的影响.本文综述了研究高k栅介质材料的意义;MOS栅介质的要求;主要新型高k栅介质材料的最新研究动态;展望了高k介质材料今后发展的主要趋势和需要解决的问题.

参考文献

[1]	Kingon A I;Maria J P;Streiffer S K .[J].Nature,2000,406:1032.
[2]	Venkateswarlu P;Bharadwaja S S N;Krupanidhi S B .[J].Thin Solid Films,2001,389:84.
[3]	Moon B K;Ishiwara H;Tolumitsu E et al.[J].Thin Solid Films,2001,385:307.
[4]	Ngai T.;Sharma R.;Fretwell J.;Chen X.;Lee JC.;Banerjee S.;Qi WJ. .Electrical properties of ZrO2 gate dielectric on SiGe[J].Applied physics letters,2000(4):502-504.
[5]	Qi Wen-Jie;Lee B H;Nieh R.Part of the SPIE Conference on Microelectronic Device Technology Ⅲ Santa Clara[C].USA:California September,1999
[6]	Kang L;Lee B H;Qi Wen-Jie .[J].IEEE Transactions on Electron Devices,2000,21(04):181.
[7]	Qi Wen-Jie;Nish R;Dharmarajan E et al.[J].Applied Physics Letters,2000,77(11):1704.
[8]	Wilk G D;Wallace R M;Anthony J M .[J].Journal of Appl Letters,2000,87(01):484.
[9]	WilkGD;WallaceRM .[J].Applied Physics Letters,1999,74(19):2854.
[10]	Kolodzey J.;Chowdhury E.A. .Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon[J].IEEE Transactions on Electron Devices,2000(1):121-128.
[11]	Gusev E P;Copel M;Cartier E .[J].Applied Physics Letters,2000,76(02):176.
[12]	Pal S.;Lahiri S.;Bose DN.;Ray SK. .Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices[J].Electronics Letters,2000(24):2044-2046.
[13]	Kwo J.;Kortan AR.;Queeney KL.;Chabal YJ.;Opila RL.;Muller DA.;Chu SNG.;Sapjeta BJ.;Lay TS.;Mannaerts JP.;Boone T.;Krautter HW. Krajewski JJ.;Sergnt AM.;Rosamilia JM.;Hong M. .Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si[J].Journal of Applied Physics,2001(7):3920-3927.
[14]	Wu Y H;Yang M Y;Chin A et al.[J].IEEE Transactions on Electron Devices,2000,21(07):341.
[15]	Johnson JW.;Ren F.;Gila BP.;Krishnamoorthy W.;Abernathy CR. Pearton SJ.;Chyi JI.;Nee TE.;Lee CM.;Chuo CC.;Luo B. .Gd2O3/GaN metal-oxide-semiconductor field-effect transistor[J].Applied physics letters,2000(20):3230-3232.
[16]	Copel M;Gribelyuk M;Gusev E .[J].Applied Physics Letters,2000,76(04):436.
[17]	Houssa M;Naili M;Bender H et al.[J].Semiconductor Science and Technology,2001,16:31.
[18]	Houssa M;Afanas'ef;Stesmans A et al.[J].Applied Physics Letters,2000,77(12):1885.
[19]	Houssa M.;Heyns MM.;Stesmans A.;Naili M. .Model for the charge trapping in high permittivity gate dielectric stacks[J].Journal of Applied Physics,2001(1):792-794.
[20]	Houssa M;Tuominen M;Naili M et al.[J].Journal of Applied Physics,2000,87(12):8615.
[21]	Jin Zhonghe;Kwok H S;Wong Man .[J].IEEE Transactions on Electron Devices,1998,19(12):502.
[22]	Ren F;Pearton S J;Abernathy C R et al.[J].Solid-State Electronics,1999,43:1817.
[23]	Jung H;Im K;Hwang H et al.[J].Applied Physics Letters,2000,76(24):3630.
[24]	Park D;King Y;Qiang Lu et al.[J].IEEE Transactions on Electron Devices,1998,19(11):441.
[25]	Houssa M;Degraeve R;Mertens P W et al.[J].Journal of Applied Physics,1999,86(11):6462.
[26]	Houssa M;Mertens PW;Heyns M M et al.[J].Solid-State Electronics,2000,44:521.

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

新型高k栅介质材料研究进展

Progress of studies on novel high k materials as gate dielectrics

参考文献