以往就镁合金微弧氧化过程中产生的残余应力对膜层性能的影响研究不多.在AZ31镁合金表面采用325 V电压,以磷酸钠溶液为电解液,在4种处理时间(1,3,5,8 min)下制备了微弧氧化膜.采用扫描电子显微镜(SEM)观察了4种氧化膜的微观组织结构；通过X射线衍射仪(XRD)分析了氧化膜的相组成并计算了残余应力；通过动电位极化测试和计算得到了膜层孔隙率.结果表明:4种氧化膜的残余应力均为压应力,大小为194～652 MPa间；5 min微弧氧化的膜层最致密、孔隙率低,残余应力最小,该结果用Stoney方程得到了验证.Stoney方程可以用来推测不同氧化时间对微弧氧化膜残余应力的影响.
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