采用溶胶-凝胶(sol-gel)法,利用自制的提拉实验设备于石英玻璃片上制得了ITO(indium tin oxide)透明导电薄膜,并就薄膜的物相结构、微观组织、导电性能及透光性等进行了研究分析.结果表明:薄膜的方电阻和透光性与提拉速度、提拉次数、热处理温度、冷却方式及Sn原子掺杂量等因素有关.当Sn原子掺杂量为12.5%(质量分数)、提拉速度为80 mm/min、经5次提拉且每次提拉后经550℃热处理(炉外空冷)而最终制得的ITO薄膜的方电阻为110 Ω/□,透光率可达90%以上.用溶胶-凝胶法制备ITO薄膜具有工艺简单可控,成本较低且宜于大面积成膜等优点.
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