采用射频共溅射方法制备了NixZn1-xO(x =0.78、0.72、0.68)薄膜.薄膜有非晶相和少量的NiO结晶相的存在.样品都具有明显的室温铁磁性,退火后(TA=803 K) Ni0.78Zn0.22O薄膜的饱和磁化强度Ms可达65 emu/cm3,对应单个Ni离子磁矩大于0.13 μB.低温下制备态薄膜都出现了电阻率极小值的现象,这是由于样品发生了金属-绝缘体转变.
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