硼是多晶硅太阳电池的受主元素,影响太阳电池的光电转换效率和稳定性.硼在硅中的物理性质很稳定,通过定向凝固、真空熔炼等方法很难去除.主要介绍了冶金法除硼的研究进展,包括吹气造渣除硼、等离子体除硼、合金定向凝固除硼工艺.同时,介绍了本实验室采用冶金法除硼的最新实验结果.
Boron is one of acceptor elements in polycrystalline silicon solar cells, which can influence the photo-voltaic efficiency and stability of a solar cell. It is difficult to remove boron by solidification or vacuum melting because the physical property of boron in silicon is very stable. The present research progress in boron removal by metallurgi-cal methods, mainly including gas blowing and slagging, plasma treatment, alloy solidification is summarizd. At the same time, the latest experimental results of our research on boron removal by metallurgical refining are introduced here.
参考文献
[1] | Morita K;Mikib T .Thermodynamics of solar-grade silicon refining[J].Intermetallics,2003,11(12):1111. |
[2] | NIST-JANAF.thermochemical tables[M].US:American Institute of Physics,1998:1885. |
[3] | Chandra P Khattak;David B Joyce;Frederick Schmid .A simple process to remove boron from metallurgical grade silicon[J].Solar Energy Materials and Solar Cells,2002,74:77. |
[4] | Kondo Jiro .Okazawa Kensuke-Method for removing boron from silicon[P].US,20070180949,2007-09-08. |
[5] | WU Ji-jun,MA Wen-hui,YANG Bin,DAI Yong-nian,K. MORITA.Boron removal from metallurgical grade silicon by oxidizing refining[J].中国有色金属学会会刊(英文版),2009(02):463-467. |
[6] | Leandro A. V. Teixeira;Kazuki Morita .Thermodynamics of Boron Removal from Molten Silicon with CaO-SiO_2 Slag[J].材料とプロセス,2007(1):83-0. |
[7] | Suzuki K.Thermodynamics for removal of boron from metallurgical silicon by flux treatment[A].Lisbon,1991:273. |
[8] | Suzuki K;Sano N et al.Thermodynamics of boron in a silicon melt[J].Metallurgical and Materials Transactions B:Process Metallurgy and Materials Processing Science,1994,25:903. |
[9] | Ito Nobuaki .Method for producing high purity silicon[P].US,20080241045,2008-10-02. |
[10] | Kondo Jiro et al.Method for producing high purity silicon[P].US,20080247936,2008-09-09. |
[11] | Okazawa Kensuke et al.Method for producing high purity silicon[P].US,20080274031,2008-11-06. |
[12] | Okajima Masaki et al.Method for producing high purity silicon[P].US,20080311020,2008-12-18. |
[13] | Fujiwara Hiroyasu et al.Silicon purifying method,slag for purifying silicon,and purified silicon[P].US,20050139148,2003-06-30. |
[14] | 王烨;伍继君;马文会 等.太阳能级硅制备技术与除硼工艺研究现状[J].中国稀土学报,2008,26:920. |
[15] | Wu Jijun;Ma Wenhui;Wei Kuixian.Removing boron from metallurgical grade silicon by vacuum oxidation refining[A].辽宁沈阳,2007:51. |
[16] | Suzuki K et al.Removal of boron from metallurgical-grade silicon by applying the plasma treatment[[J].ISI J Int,1992,32(05):630. |
[17] | Alemanya C;Trassyb C;Pateyronc B et al.Refining of metallurgical-grade silicon by inductive plasma[J].Solar Energy Materials and Solar Cells,2002,72:41. |
[18] | T. YOSHIKAWA;K. MORiTA .Refining of Si by the solidification of Si-Al melt with electromagnetic force[J].ISIJ International,2005(7):967-971. |
[19] | Yoshikawa T;Morita K.Solidification refining of Si with Si-Al melts[A].Scndai,2006:54. |
[20] | Refining of silicon during its solidification from a Si-Al melt[J].Journal of Crystal Growth,2009(3):776. |
[21] | TAKESHI YOSHIKAWA;KENTARO ARIMURA;KAZUKI MORITA .Boron Removal by Titanium Addition in Solidification Refining of Silicon with Si-Al Melt[J].Metallurgical and Materials Transactions, B. Process metallurgy and materials processing science,2005(6):837-842. |
[22] | Dawless;Robert K .Boron removal in silicon purification[P].US,4312848,1982-01-26. |
[23] | Li Wenchao.Metallurgy and material physical chemistry[M].北京:冶金工业出版社,2001:33. |
[24] | Tanahashi et al.Distribution behavior of boron between SiO_2-saturated NaO_(0.5)-CaO-SiO_2 flux-molten silicon[J].J Mining Mater,2002,118:497. |
[25] | Shiro Ban-Ya;Mitsutaka Hino .Tetsuya Nagasaka Estimation of water vapor solubility in molten silicates by quadratic formalism based on the regular solution model[J].ISIJ International,1993,33(01):12. |
[26] | 罗大伟,张国梁,张剑,李军,李廷举.冶金法制备太阳能级硅的原理及研究进展[J].铸造技术,2008(12):1721-1726. |
- 下载量()
- 访问量()
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%