a-C:H(N)薄膜的制备及性能

无机材料学报, 1999, 14(4): 601-606.

a-C:H(N)薄膜的制备及性能

程宇航 , 吴一平 , 陈建国 , 乔学亮 , 谢长生 , 许德胜

2. 2. 激光技术国家重点实验室, 武汉 430074

1.1. Depart of Materials Science and Engineering

2. 2. State Key Laboratory of Laser Technology, Huazhong University of Science and Technology Wuhan 430074 China

关键词： a-C:H（N）薄膜 , null , null , null

Deposition and Properties of a C:H(N) Films

CHENG Yu-Hang , WU Yi-Ping , CHEN Jian-Guo , QIAO Xue-Liang , XIE Cang-Sheng , XU De-Sheng

Keywords： a-C:H(N) films， plasma enhanced chemical vapor deposition, deposition process, direct current resistivity , 等离子增强化学气相沉积 , 制备工艺 , 直流电阻率

采用射频直流等离子化学气相沉积法用Ｃ_２Ｈ_２、Ｎ_２和Ａｒ组成的混合气体制备ａ-Ｃ：Ｈ（Ｎ）薄膜，研究了薄膜的制备工艺、结构及直流导电特性实验结果表明，ａ Ｃ：Ｈ（Ｎ）薄膜的沉积速率随混合气体中Ｃ_２Ｈ_２含量的增加而增大，当混合气体中Ｎ２含量增加到７５％时，薄膜的含氮量增大到９０９％ 薄膜中Ｃ、Ｎ原子以Ｃ≡ Ｎ和Ｃ- Ｎ键的形式存在，结合进薄膜中的氮大大降低薄膜的直流电阻率

a-C:H(N) films were deposited from mixture gases of C₂H₂, Ar and N₂ by r.f.-d.c. PECVD method. The deposition process, structure and direct current resistivity of the a-C:H(N) films were studied. The deposition rate of the a-C:H(N)
films increases with the increase of C₂H₂ content in the feed gases. The study of XPS and FTIR spectroscopy indicates that up to 9.09at% N can be incorporated
with C atoms in a-C:H(N) films as C≡N and C--N. The bonded N in a-C:H(N) films leads to the decrease of direct current resistivity.

参考文献

[1]

程宇航，吴一平，陈建国等．材料导报，1996, 6 (10): 40--45
2 Liu A Y， Cohen M L． Science， 1989, 245: 841--849
3 Cohen M L. Phys. Rev., 1985, B32 (12): 7988--7994
4 Liu C, Lu Yuan Z, Lieber Charles M． Science, 1993, 261: 334--335
5 Su X W, Song H W, Cui F Z． Surf. Coat. Technol., 1996, 84: 388--391
6 Glenis S, Neison A J, Labes M M． J. Appl. Phys., 1996, 80 (9): 5404--5407
7 Jr Freire F L， Mariotto G,?Achete C A． Surf. Coat. Technol.， 1995, 74-75: 382--392
8 程宇航，吴一平，陈建国等．功能材料，1998， 29 (1) 54--57
9 Durrant Steven F, Marcal Nei, Castro Sandra G． Thin Solid Flms, (1995), 259: 139--145
10 Durrent Stven F, Rangel Elidiane C, Bica de Moraes Mario A． J. Vac. Sci. Technol. 1995, A13 (4): 1901--1906
11 程宇航，吴一平，陈建国等．物理学报，1998， 47 (1)： 83--86
12 Demichelis F, Rong X F, Schreiter S． Diamond and Related Materials, 1995, 4: 361--365
13 Robertson J. Acvances in Physics, 1986, 35 (4): 317--374
14 Amir O, Kalish R. J. Appl. Phys.， 1991, 70 (9): 4958--4962
15 Wood Peter, Wydeven Ted, Tsuji Odamu． Thin Solid Films， 1995, 258: 151--158

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