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  4. 掺杂和辐照对MgB2超导电性影响的研究进展

材料导报, 2008, 22(6): 20-23.

掺杂和辐照对MgB2超导电性影响的研究进展

刘志勇 1, , 刘翠芳 2, , 倪宝荣 3,

1.桂林工学院有色金属材料及其加工新技术教育部重点实验室,桂林,541004

2.桂林工学院有色金属材料及其加工新技术教育部重点实验室,桂林,541004

3.福冈工业大学功能材料研究中心,福冈,811-0295,日本

基金项目:   外国专家资助项目(S2007450073)  

关键词： MgB2 , 掺杂 , 辐照 , 超导电性

Research Progress in Effect of Doping and Irradiation on Superconductivity of MgB2

分别从掺杂和辐照两个方面论述了改善MgB2超导电性的研究进展.研究发现:虽然只有少数掺杂物可以提高MgB2的临界转变温度,但几乎所有的掺杂都会提高样品的临界电流密度Jc和不可逆场Hirr.在所有的掺杂物中,SiC掺杂取得了最好的效果.另外研究发现,通过一定程度的辐照也可以提高MgB2的超导电性,但辐照存在一个最佳的剂量,过量的辐照会产生破坏作用.

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