利用热蒸发方法,在硅衬底上制备出立方MgZnO纳米线。以Mg粉为源材料,所制备的为立方相MgO纳米线。以Mg粉和Zn粉混合物为源材料,可以制备出立方相MgZnO纳米线,Zn含量7%,直径200～300nm,具有单晶结构;同时产物中还包括六方相ZnO纳米线,直径30nm左右。MgZnO纳米线中Zn含量远低于源材料中的Zn含量,这可能是ZnO和Zn的蒸汽压远大于MgO和Mg的缘故。
Cubic MgZnO nanowires were prepared on silicon substrates by a thermal evaporation method.MgO nanowires could be prepared using Mg powders as the source material.MgZnO nanowires could be obtained using the mixture of Mg and Zn powders as the source materials,with the Zn content of 7at% and the diameter of 200-300nm,and there were hexagonal ZnO nanowires coexisting with the cubic MgZnO nanowires in the product.Both the MgZnO and the ZnO nanowires were single crystals.The Zn content in MgZnO nanowires was much lower than that in the source material,which may be due to the higher vapor pressure of ZnO and Zn than MgO and Mg.
参考文献
| [1] | Ohtomo A.;Koida T.;Masubuchi K.;Koinuma H.;Sakurai Y. Yoshida Y.;Yasuda T.;Segawa Y.;Kawasaki M. .MgxZn1-xO as a II-VI widegap semiconductor alloy[J].Applied physics letters,1998(19):2466-2468. |
| [2] | Teng C W;Muth J F;Ozgtir U et al.[J].Applied Physics Letters,2000,76:979-981. |
| [3] | Chu T T;Jiang H L;Ji W et al.[J].Mieroelectronic Engineering,2010,87:1777-1780. |
| [4] | Yang W.;Hullavarad SS.;Nagaraj B.;Takeuchi I.;Sharma RP.;Venkatesan T.;Vispute RD.;Shen H. .Compositionally-tuned epitaxial cubic MgxZn1-xO on Si(100) for deep ultraviolet photodetectors[J].Applied Physics Letters,2003(20):3424-3426. |
| [5] | Choopun S;Vispute R D;Yang W et al.[J].Applied Physics Letters,2002,80:1529-1531. |
| [6] | Yang W;Vispute R D;Choopun S et al.[J].Applied Physics Letters,2001,78:2787-2789. |
| [7] | Bundesmannb C;Schubert M et al.[J].Applied Physics Letters,2004,85:905-907. |
| [8] | Lu J G;Fujita S .[J].Applied Physics Letters,2006,89:262107. |
| [9] | Lu J G;Zhang Y Z et al.[J].Applied Physics Letters,2007,91:193108. |
| [10] | Gayen R N;Das S N;Dalui S et al.[J].Journal of Crystal Growth,2008,310:4073-4080. |
| [11] | Heo Y W;Kaufman M;Pruessner K et al.[J].Solid-State Electronics,2003,47:2269-2273. |
| [12] | Hsu H C;Wu C Y;Cheng H M et al.[J].Applied Physics Letters,2006,89:013101. |
| [13] | Kling R;Kirehner C;Gruber T et al.[J].Nanotechnology,2004,15:1043-1046. |
| [14] | Lee CY;Tseng TY;Li SY;Lin P .Single-crystalline MgxZn1-xO (0 <= x <= 0.25) nanowires on glass substrates obtained by a hydrothermal method: growth, structure and electrical characteristics[J].Nanotechnology,2005(8):1105-1111. |
| [15] | Lorenz M;Kaidashev E M;Rahm A et al.[J].Applied Physics Letters,2005,86:143113. |
| [16] | Tang HP;Zhu LP;He HP;Ye ZZ;Zhang Y;Zhi MJ;Yang ZX;Zhao BH;Li TX .Preparation and characterization of Al-doped quasi-aligned ZnO submicro-rods[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2006(13):2696-2700. |
| [17] | Wang F;Zhao C;Liu B et al.[J].Journal of Physics D:Applied Physics,2009,42:115411. |
| [18] | Zhi M J;Zhu L P;Ye Z Z et al.[J].Journal of Physical Chemistry B,2005,109:23930-23934. |
| [19] | Heo Y W;Tien L C et al.[J].Journal of Materials Research,2005,20:3028-3033. |
| [20] | Soci C;Zhang A;Xiang B;Dayeh SA;Aplin DPR;Park J;Bao XY;Lo YH;Wang D .ZnO nanowire UV photodetectors with high internal gain[J].Nano letters,2007(4):1003-1009. |
| [21] | Prades J D;Jimenez-Diaz R;Hernandez-Ramirez F et al.[J].Journal of Physical Chemistry C,2008,112:14639-14644. |
| [22] | Honig R E;Kramer D A .[J].RCA Review,1969,301:285-305. |
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