本文采用非同时读出条件下两波耦合实验装置,以532 nm的单频固体激光器为光源,在不同写入光夹角θ、抽运光的偏振方向与e偏振光的方向呈10°、信号光为e偏振光及不同信号光与抽运光光强比条件下,通过改变写入光在Ce: KNSBN晶体内的不同位置研究其对两波耦合有效增益的影响.研究结果表明,在相同角度下写入光强比为1: 10,写入光在晶体内位置d=0.1 cm时最佳,有效增益达到最大.在最佳写入光位置,写入光强比为1: 10时,在写入光夹角为24°时两波耦合有效增益为最大.并对实验结果进行了理论拟合与分析.
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