利用透射电子显微镜及X射线衍射,研究脉冲激光沉积技术(PLD)在Si(001)衬底上生长LiNbO3薄膜的微结构.结果表明,在600℃的衬底温度、30Pa的氧分压条件下,在硅片表面5nm厚的非晶氧化层上生长的薄膜,为c轴择优取向的单相LiNbO3晶体.本文还讨论了获得c轴择优取向LiNbO3薄膜的生长机理.
A lithium niobate (LiNbO3) thin film was fabricated by a pulsed laser deposition method on Si(001) substrate with about 5nm-thick amorphous silicon oxide surface layer, under the conditions of 600℃ substrate temperature and 30 Pa oxygen pressure. The film was investigated by transmission electron microscope and X-ray diffraction. The factors influencing on the evolution and preferred orientation of the LiNbO3 were discussed. The results obtained show that the LiNbO3 thin film is highly c-axis oriented perpendicularly to the substrate under the optimized deposition conditions above mentioned.
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