以短切炭纤维为增强相,采用温压-原位反应法制备C/C-SiC材料,研究了热处理温度对C/C-SiC材料组织结构的影响,以及Si(1)-C原位反应机理.结果表明:试样中硅粉均匀分布于素坯内部,Si-C原位反应只需Si近程扩散即可.Si粉熔化后迅速在就近的炭源表面铺展,并与之反应生成SiC.Si(1)-C反应相对于Si(s)-C反应速度更快,反应更完全.温度越高,生成的SiC也就越多,残留Si相应减少.1500 ℃热处理后复合材料的SiC含量达到62.7%,残留Si仅为1.4%.
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