利用原子层沉积技术(Atomic layer deposition, ALD)进行ZrO2薄膜工艺研究,获得了低温下ZrO2薄膜ALD的最佳工艺条件.分析了在低温下前驱体脉冲时间,吹扫时间生长工艺条件对薄膜性能的影响.以四(二甲基氨)基锆(TDMAZ)和H2O为前驱体,制备了均匀性良好,表面粗糙度低,可见光透过率高,水汽阻挡效果良好的ZrO2薄膜.
Study on process of ZrO2 thin films was carried out by atomic layer deposition(ALD)and the best process condition of ZrO2 thin films ALD was achieved.The effects of pulse and purge time of precursor on the properties of the deposited ZrO2 thin films under low temperature were analysed.The ZrO2 thin films with good uniformity, low surface roughness and high visible light transmittance were prepared by using Tetrakis (dimethylamido) zirconium (TDMAZ) and H2O as precursors.
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