以低成本的无机盐SnCl2·2H2O、SbCl3和Co(NO3)2·9H2O为原料,采用溶胶-凝胶法与浸渍提拉技术成功地制备出Co掺杂的ATO(Sb掺杂SnO2)复合薄膜.利用XRD、SEM、四探针电阻仪、紫外-可见光分光光度计及振动样品磁强计(VSM)等测试方法对Co/ATO复合薄膜的结构与物性进行了表征与评价.结果表明:少量的Co掺杂ATO复合薄膜仍保持四方金红石结构,复合薄膜中的晶粒分布均匀,其晶粒尺寸分布为4～7 nm;随着Co含量的增加,Co/ATO复合薄膜的电阻率呈现出先降低后提高,且当Co含量为0.5 mol%时,Co/ATO复合薄膜的电阻率最低为5.6×10-1Ω·cm;在400～700 nm可见光范围内,平均透过率达到90%以上,其光学带隙在3.9～4.0 eV之间,且随着Co含量的增加,可见光透过率和光学带隙呈下降趋势;Co含量为3.0 mol%的ATO复合薄膜具有室温铁磁性,其矫顽力约为100 Oe,磁性根源主要归结为磁性原子与基体载流子相互作用的结果.
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